參數(shù)資料
型號: M25P40
廠商: 意法半導體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 26/51頁
文件大?。?/td> 398K
代理商: M25P40
Instructions
M25P40
26/51
6.7
Read Data Bytes at Higher Speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, is shifted out on Serial Data Output (Q), each
bit being shifted out, at a maximum frequency f
C
, during the falling edge of Serial Clock (C).
The instruction sequence is shown in
Figure 13
.
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes at Higher Speed (FAST_READ)
instruction. When the highest address is reached, the address counter rolls over to
000000h, allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any
Read Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or
Write cycle is in progress, is rejected without having any effects on the cycle that is in
progress.
Figure 13.
Read Data Bytes at Higher Speed (FAST_READ)
Instruction Sequence
and Data-Out Sequence
1.
Address bits A23 to A19 are Don’t Care.
C
D
AI04006
S
Q
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31
22 21
3
2
1
0
High Impedance
Instruction
24 BIT ADDRESS
0
C
D
S
Q
32 33 34
36 37 38 39 40 41 42 43 44 45 46
7
6
5
4
3
2
0
1
DATA OUT 1
Dummy Byte
MSB
7
6
5
4
3
2
1
0
DATA OUT 2
MSB
MSB
7
47
7
6
5
4
3
2
0
1
35
相關PDF資料
PDF描述
M25PE10-VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
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M25PE10-VMN6P 4 Mbit Uniform Sector, Serial Flash Memory
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