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參數(shù)資料
| 型號： | M25P40 |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 34/51頁 |
| 文件大?。?/td> | 398K |
| 代理商： | M25P40 |
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Power-up and Power-down
M25P40
34/51
7
Power-up and Power-down
At Power-up and Power-down, the device must not be selected (that is Chip Select (S) must
follow the voltage applied on V
CC
) until V
CC
reaches the correct value:
V
CC
(min) at Power-up, and then for a further delay of t
VSL
V
SS
at Power-down
Usually a simple pull-up resistor on Chip Select (S) can be used to ensure safe and proper
Power-up and Power-down.
●
●
To avoid data corruption and inadvertent write operations during power-up, a Power On
Reset (POR) circuit is included. The logic inside the device is held reset while V
CC
is less
than the Power On Reset (POR) threshold voltage, V
WI
– all operations are disabled, and
the device does not respond to any instruction.
Moreover, the device ignores all Write Enable (WREN), Page Program (PP), Sector Erase
(SE), Bulk Erase (BE) and Write Status Register (WRSR) instructions until a time delay of
t
PUW
has elapsed after the moment that V
CC
rises above the V
WI
threshold. However, the
correct operation of the device is not guaranteed if, by this time, V
CC
is still below V
CC
(min).
No Write Status Register, Program or Erase instructions should be sent until the later of:
t
PUW
after V
CC
passed the V
WI
threshold
t
VSL
after V
CC
passed the V
CC
(min) level
These values are specified in
Table 9
.
●
●
If the delay, t
VSL
, has elapsed, after V
CC
has risen above V
CC
(min), the device can be
selected for READ instructions even if the t
PUW
delay is not yet fully elapsed.
At Power-up, the device is in the following state:
The device is in the Standby Power mode (not the Deep Power-down mode).
The Write Enable Latch (WEL) bit is reset.
●
●
Normal precautions must be taken for supply rail decoupling, to stabilize the V
CC
supply.
Each device in a system should have the V
CC
rail decoupled by a suitable capacitor close to
the package pins. (Generally, this capacitor is of the order of 0.1μF).
At Power-down, when V
CC
drops from the operating voltage, to below the Power On Reset
(POR) threshold voltage, V
WI
, all operations are disabled and the device does not respond
to any instruction. (The designer needs to be aware that if a Power-down occurs while a
Write, Program or Erase cycle is in progress, some data corruption can result.)
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| M25PE10-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M25P40_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40_12 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:Micron M25P40 Serial Flash Embedded Memory |
| M25P40-VMB3TPB | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25P40-VMB3TPB TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8UFDFPN |
| M25P40-VMB6TPB | 制造商:Micron Technology Inc 功能描述:4MBIT SPI NOR FLASH 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE FLASH - Cut TR (SOS) 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE FLASH - Tape and Reel 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin UFDFPN EP T/R |
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