參數(shù)資料
型號: M25P40
廠商: 意法半導體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 36/51頁
文件大?。?/td> 398K
代理商: M25P40
Initial delivery state
M25P40
36/51
8
Initial delivery state
The device is delivered with the memory array erased: all bits are set to 1 (each byte
contains FFh). The Status Register contains 00h (all Status Register bits are 0).
9
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 9.
Absolute Maximum Ratings
Symbol
Parameter
Min.
Max.
Unit
T
STG
Storage Temperature
–65
150
°C
V
IO
Input and Output Voltage (with respect to Ground)
–0.6
4.0
V
V
CC
Supply Voltage
–0.6
4.0
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
(1)
1.
JEDEC Std JESD22-A114A (C1=100 pF, R1=1500
, R2=500
).
–2000
2000
V
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