參數(shù)資料
型號(hào): M25PE16-VMW6TG
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門(mén),串行閃存
文件頁(yè)數(shù): 22/56頁(yè)
文件大?。?/td> 334K
代理商: M25PE16-VMW6TG
Instructions
M25PE16
22/56
6.1
Write Enable (WREN)
The Write Enable (WREN) instruction (
Figure 6
) sets the Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set prior to every Page Write (PW), Page
Program (PP), Page Erase (PE), Sector Erase (SE), SubSector Erase (SSE), Bulk Erase
(BE), Write Status Register (WRSR) and Write to Lock Register (WRLR) instructions.
The Write Enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
Figure 6.
Write Enable (WREN) instruction sequence
C
D
AI02281E
S
Q
2
1
3
4
5
6
7
High Impedance
0
Instruction
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