- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄358974 > M25PE80-VMP6TG (意法半導(dǎo)體) 4 Mbit Uniform Sector, Serial Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M25PE80-VMP6TG |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門(mén)，串行閃存 |
| 文件頁(yè)數(shù)： | 27/43頁(yè) |
| 文件大?。?/td> | 599K |
| 代理商： | M25PE80-VMP6TG |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)當(dāng)前第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)
27/43
M25PE80
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to 1
(FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been ex-
ecuted. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write En-
able Latch (WEL).
The Bulk Erase (BE) instruction is entered by driv-
ing Chip Select (S) Low, followed by the instruction
code on Serial Data Input (D). Chip Select (S)
must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in
Figure 20.
Chip Select (S) must be driven High after the
eighth bit of the instruction code has been latched
in, otherwise the Bulk Erase instruction is not exe-
cuted. As soon as Chip Select (S) is driven High,
the self-timed Bulk Erase cycle (whose duration is
t
BE
) is initiated. While the Bulk Erase cycle is in
progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the self-
timed Bulk Erase cycle, and is 0 when it is com-
pleted. At some unspecified time before the cycle
is completed, the Write Enable Latch (WEL) bit is
reset.
Any Bulk Erase (BE) instruction, while an Erase,
Program or Write cycle is in progress, is rejected
without having any effects on the cycle that is in
progress. A Bulk Erase (BE) instruction is ignored
if at least one sector or sub-sector is write-protect-
ed (Hardware or Software protection).
Figure 20. Bulk Erase (BE) Instruction Sequence
C
D
AI03752D
S
2
1
3
4
5
6
7
0
Instruction
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE80-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMP6 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMW6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMW6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE80-VMP6TP | 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE80-VMS6G | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 8Mbit 1M x 8bit 8ns 8-Pin QFN Tray |
| M25PE80-VMS6P | 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE80-VMS6TG | 功能描述:IC FLASH 8MBIT 75MHZ 8QFN RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤(pán) 其它名稱(chēng):71P71804S200BQ |
| M25PE80-VMS6TP | 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。