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參數(shù)資料
| 型號(hào)： | M25PE80-VMP6TG |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門(mén)，串行閃存 |
| 文件頁(yè)數(shù)： | 6/43頁(yè) |
| 文件大小： | 599K |
| 代理商： | M25PE80-VMP6TG |
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M25PE80
6/43
SIGNAL DESCRIPTION
Serial Data Output (Q).
This output signal is
used to transfer data serially out of the device.
Data is shifted out on the falling edge of Serial
Clock (C).
Serial Data Input (D).
This input signal is used to
transfer data serially into the device. It receives in-
structions, addresses, and the data to be pro-
grammed. Values are latched on the rising edge of
Serial Clock (C).
Serial Clock (C).
This input signal provides the
timing of the serial interface. Instructions, address-
es, or data present at Serial Data Input (D) are
latched on the rising edge of Serial Clock (C). Data
on Serial Data Output (Q) changes after the falling
edge of Serial Clock (C).
Chip Select (S).
When this input signal is High,
the device is deselected and Serial Data Output
(Q) is at high impedance. Unless an internal Read,
Program, Erase or Write cycle is in progress, the
device will be in the Standby mode (this is not the
Deep Power-down mode). Driving Chip Select (S)
Low selects the device, placing it in the Active
Power mode.
After Power-up, a falling edge on Chip Select (S)
is required prior to the start of any instruction.
Reset (Reset).
The Reset (Reset) input provides
a hardware reset for the memory.
When Reset (Reset) is driven High, the memory is
in the normal operating mode. When Reset (Re-
set) is driven Low, the memory will enter the Reset
mode. In this mode, the output is high impedance.
Driving Reset (Reset) Low while an internal oper-
ation is in progress will affect this operation (write,
program or erase cycle) and data may be lost.
Top Sector Lock (TSL).
This input signal puts
the device in the Hardware Protected mode, when
Top Sector Lock (TSL) is connected to V
SS
, caus-
ing the top 256 pages (upper addresses) of the
memory to become read-only (protected from
write, program and erase operations).
When Top Sector Lock (TSL) is connected to V
CC
,
the top 256 pages of memory behave like the other
pages of memory.
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PDF描述 |
|---|---|
| M25PE80-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMP6 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMW6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMW6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE80-VMP6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE80-VMS6G | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 8Mbit 1M x 8bit 8ns 8-Pin QFN Tray |
| M25PE80-VMS6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE80-VMS6TG | 功能描述:IC FLASH 8MBIT 75MHZ 8QFN RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤(pán) 其它名稱:71P71804S200BQ |
| M25PE80-VMS6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
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