參數(shù)資料
型號(hào)： M25PE80-VMP6TG
廠(chǎng)商： 意法半導(dǎo)體
元件分類(lèi)： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門(mén)，串行閃存
文件頁(yè)數(shù)： 28/43頁(yè)
文件大?。?/td> 599K
代理商： M25PE80-VMP6TG
M25PE80
28/43
Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction
is the only way to put the device in the lowest con-
sumption mode (the Deep Power-down mode). It
can also be used as an extra software protection
mechanism, while the device is not in active use,
since in this mode, the device ignores all Write,
Program and Erase instructions.
Driving Chip Select (S) High deselects the device,
and puts the device in the Standby mode (if there
is no internal cycle currently in progress). But this
mode is not the Deep Power-down mode. The
Deep Power-down mode can only be entered by
executing the Deep Power-down (DP) instruction,
subsequently reducing the standby current (from
I
CC1
to I
CC2
, as specified in
Table 15.
).
Once the device has entered the Deep Power-
down mode, all instructions are ignored except the
Release from Deep Power-down (RDP) instruc-
tion. Issuing the Release from Deep Power-down
(RDP) instruction will cause the device to exit the
Deep Power-down mode.
The Deep Power-down mode automatically stops
at Power-down, and the device always Powers-up
in the Standby mode.
The Deep Power-down (DP) instruction is entered
by driving Chip Select (S) Low, followed by the in-
struction code on Serial Data Input (D). Chip Se-
lect (S) must be driven Low for the entire duration
of the sequence.
The instruction sequence is shown in
Figure 21.
.
Chip Select (S) must be driven High after the
eighth bit of the instruction code has been latched
in, otherwise the Deep Power-down (DP) instruc-
tion is not executed. As soon as Chip Select (S) is
driven High, it requires a delay of t
DP
before the
supply current is reduced to I
CC2
and the Deep
Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an
Erase, Program or Write cycle is in progress, is re-
jected without having any effects on the cycle that
is in progress.
Figure 21. Deep Power-down (DP) Instruction Sequence
C
D
AI03753D
S
2
1
3
4
5
6
7
0
t
DP
Deep Power-down Mode
Stand-by Mode
Instruction
相關(guān)PDF資料
PDF描述
M25PE80-VMP6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE80 4 Mbit Uniform Sector, Serial Flash Memory
M25PE80-VMP6 4 Mbit Uniform Sector, Serial Flash Memory
M25PE80-VMW6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE80-VMW6TP 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE80-VMP6TP 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE80-VMS6G 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 8Mbit 1M x 8bit 8ns 8-Pin QFN Tray
M25PE80-VMS6P 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE80-VMS6TG 功能描述:IC FLASH 8MBIT 75MHZ 8QFN RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤(pán) 其它名稱(chēng):71P71804S200BQ
M25PE80-VMS6TP 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout
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