參數(shù)資料
型號(hào): M25PE80-VMW6TP
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 31/43頁
文件大?。?/td> 599K
代理商: M25PE80-VMW6TP
31/43
M25PE80
Table 10. Power-Up Timing and V
WI
Threshold
Symbol
Note: 1. These parameters are characterized only, over the temperature range –40°C to +85°C.
INITIAL DELIVERY STATE
The device is delivered with the memory array
erased: all bits are set to 1 (each Byte contains
FFh). All usable Status Register bits are 0.
Parameter
Min.
Max.
Unit
t
VSL1
V
CC
(min) to S low
30
μs
t
PUW1
Time delay before the first Write, Program or Erase instruction
1
10
ms
V
WI1
Write Inhibit Voltage
1.5
2.5
V
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