參數(shù)資料
型號(hào): M25PE80-VMW6TP
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁(yè)數(shù): 42/43頁(yè)
文件大?。?/td> 599K
代理商: M25PE80-VMW6TP
M25PE80
42/43
REVISION HISTORY
Table 21. Document Revision History
Date
Version
Description of Revision
24-Nov-2004
0.1
First Issue.
07-Dec-2004
0.2
4KB Software protection granularity extended to Sector 15.
10-May-2005
0.3
SO16W package removed, SO8W package added.
End timing line of t
SHQZ
modified in
Figure 27., Output Timing
. Plating Technology
options modified in
Table 20., Ordering Information Scheme
. Minor text changes.
Tables
3
and
4
and
Figure 6.
for details on the software protection scheme.
25-Jul-2005
0.4
Lock Register programming sequence detailed in Section
Write to Lock Register
(WRLR)
.
Sections
An Easy Way to Modify Data
,
A Fast Way to Modify Data
,
Page Write (PW)
and
Page Program (PP)
, updated to explain when using Page Write and Page
Program instructions.
Bulk Erase cycle time (t
BE
), Page Write cycle time (t
PW
) and Page Program cycle time
(t
PP
) updated in
Table 16., AC Characteristics
.
24-Aug-2005
1.0
Version number updated for internet. No document changes.
25-Aug-2005
2.0
Document status updated to Preliminary Data.
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