- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359053 > M29W800AB100ZA5T (意法半導體) 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M29W800AB100ZA5T |
| 廠商： | 意法半導體 |
| 英文描述： | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 8兆1兆x8或512KB的x16插槽，引導塊低壓單電源閃存 |
| 文件頁數(shù)： | 17/33頁 |
| 文件大?。?/td> | 234K |
| 代理商： | M29W800AB100ZA5T |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁當前第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁
17/33
M29W800AT, M29W800AB
Table 17. Write AC Characteristics, W Controlled
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
Note: 1. Sampled only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Symbol
Alt
Parameter
M29W800AT / M29W800AB
Unit
80
90
V
CC
= 3.0V to 3.6V
CL = 30pF
V
CC
= 3.0V to 3.6V
CL = 30pF
Min
Max
Min
Max
t
AVAV
t
WC
Address Valid to Next Address Valid
80
90
ns
t
AVWL
t
AS
Address Valid to Write Enable Low
0
0
ns
t
DVWH
t
DS
Input Valid to Write Enable High
35
45
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low
0
0
ns
t
GHWL
Output Enable High to Write Enable Low
0
0
ns
t
PHPHH(1, 2)
t
VIDR
RP Rise Time to V
ID
500
500
ns
t
PHWL(1)
t
RSP
RP High to Write Enable Low
4
4
μ
s
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
50
50
μ
s
t
WHDX
t
DH
Write Enable High to Input Transition
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
0
0
ns
t
WHGL
t
OEH
Write Enable High to Output Enable Low
0
0
ns
t
WHRL(1)
t
BUSY
Program Erase Valid to RB Delay
90
90
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
30
30
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
45
45
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
35
35
ns
Block Erase (BE) Instruction.
This
uses a minimum of six write cycles. The Erase
Set-up command 80h is written to address AAAh
in the Byte-wide configuration or address 555h in
the Word-wide configuration on third cycle after
the two Coded cycles. The Block Erase Confirm
command 30h is similarly written onthe sixth cycle
after anothertwo Coded cycles.During the input of
the second command an address within the block
to beerased is given and latched into the memory.
Additional block Erase Confirm commands and
block addresses can be written subsequently to
erase other blocks in parallel, without further Cod-
ed cycles. The erase will start after the erase tim-
eout period (seeErase TimerBit DQ3 description).
instruction
Thus, additionalErase Confirm commands for oth-
er blocksmust begiven within this delay. The input
of a new Erase Confirm command will restart the
timeout period. The status of the internal timer can
be monitoredthrough the level of DQ3, if DQ3 is ’0’
the Block Erase Command has been given and
the timeoutis running, if DQ3is ’1’, thetimeout has
expired and the P/E.C. is erasing the Block(s). If
the second command given is not an erase con-
firm or if the Coded cycles are wrong, the instruc-
tion aborts, and the device is reset to Read Array.
It is not necessary to program the block with 00h
as the P/E.C. will do this automatically before to
erasing to FFh. Read operations after the sixth ris-
ing edge of W orE output the status register status
bits.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W800AT100ZA5T | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| M29W800AB90ZA5T | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| M29W800AT90ZA5T | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| M29W800AB80ZA5T | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| M29W800AT80ZA5T | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W800AB120M1 | 功能描述:閃存 1Mx8 or 512Kx16 120n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W800AB120N1 | 功能描述:閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W800AB-120N1 | 制造商:STMicroelectronics 功能描述: |
| M29W800AB120N6 | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 120NS 48TSOP - Trays |
| M29W800AB120ZA6 | 功能描述:閃存 LFBGA48 1MX8 512KX16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。