參數(shù)資料
型號(hào): M29W800FB9N3F
廠商: NUMONYX
元件分類: PROM
英文描述: 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁數(shù): 22/49頁
文件大?。?/td> 936K
代理商: M29W800FB9N3F
M29W800FT, M29W800FB
DC and AC parameters
Figure 9.
Read mode AC waveforms
AI05448
tAVAV
tAVQV
tAXQX
tELQX
tEHQZ
tGLQV
tGLQX
tGHQX
VALID
A0-A18/
A–1
G
DQ0-DQ7/
DQ8-DQ15
E
tELQV
tEHQX
tGHQZ
VALID
tBHQV
tELBL/tELBH
tBLQZ
BYTE
Table 12.
Read AC characteristics
Symbol
Alt
Parameter
Test condition
M29W800FT/B
Unit
70 ns
90 ns(1)
tAVAV
tRC
Address Valid to Next Address Valid
E = VIL,
G = VIL
Min
70
90
ns
tAVQV
tACC
Address Valid to Output Valid
E = VIL,
G = VIL
Max
70
90
ns
tELQX
(2)
tLZ
Chip Enable Low to Output Transition
G = VIL
Min
0
ns
tELQV
tCE
Chip Enable Low to Output Valid
G = VIL
Max
70
90
ns
tGLQX
tOLZ
Output Enable Low to Output Transition
E = VIL
Min
0
ns
tGLQV
tOE
Output Enable Low to Output Valid
E = VIL
Max
30
ns
tHZ
Chip Enable High to Output Hi-Z
G = VIL
Max
25
ns
tGHQZ
tDF
Output Enable High to Output Hi-Z
E = VIL
Max
25
ns
tEHQX
tGHQX
tAXQX
tOH
Chip Enable, Output Enable or Address
Transition to Output Transition
Min
0
ns
tELBL
tELBH
tELFL
tELFH
Chip Enable to BYTE Low or High
Max
5
ns
tBLQZ
tFLQZ
BYTE Low to Output Hi-Z
Max
25
ns
tBHQV
tFHQV
BYTE High to Output Valid
Max
30
ns
1.
Only available for the known good die version.
2.
Sampled only, not 100% tested.
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