參數(shù)資料
型號(hào)： M29W800FB9N3F
廠商： NUMONYX
元件分類： PROM
英文描述： 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁(yè)數(shù)： 33/49頁(yè)
文件大?。?/td> 936K
代理商： M29W800FB9N3F
M29W800FT, M29W800FB
Common Flash interface (CFI)
Table 22.
CFI query identification string (1)
1.
Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Address
Data
Description
Value
x16
x 8
10h
20h
0051h
‘Q’
11h
22h
0052h
Query unique ASCII string ‘QRY’
‘R’
12h
24h
0059h
‘Y’
13h
26h
0002h
Primary algorithm command set and control interface ID
code 16-bit ID code defining a specific algorithm
AMD
compatible
14h
28h
0000h
15h
2Ah
0040h
Address for primary algorithm extended query table (see
P = 40h
16h
2Ch
0000h
17h
2Eh
0000h
Alternate vendor command set and control interface ID
code second vendor - specified algorithm supported
NA
18h
30h
0000h
19h
32h
0000h
Address for alternate algorithm extended query table
NA
1Ah
34h
0000h
Table 23.
CFI query system interface information
Address
Data
Description
Value
×16
× 8
1Bh
36h
0027h
VCC logic supply minimum program/erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7 V
1Ch
38h
0036h
VCC logic supply maximum program/erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6 V
1Dh
3Ah
0000h
VPP [programming] supply minimum program/erase voltage
NA
1Eh
3Ch
0000h
VPP [programming] supply maximum program/erase voltage
NA
1Fh
3Eh
0004h
Typical timeout per single byte/word program = 2n s
16 s
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2n s
NA
21h
42h
000Ah
Typical timeout per individual block erase = 2n ms
1 s
22h
44h
0000h
Typical timeout for full chip erase = 2n ms (1)
1.
Not supported in the CFI.
23h
46h
0004h
Maximum timeout for byte/word program = 2n times typical
256 s
24h
48h
0000h
Maximum timeout for write buffer program = 2n times typical
NA
25h
4Ah
0003h
Maximum timeout per individual block erase = 2n times typical
8 s
26h
4Ch
0000h
Maximum timeout for chip erase = 2n times typical (1)
相關(guān)PDF資料
PDF描述
M2CT-90A1-24ER PUSHBUTTON SWITCH, DPST, MOMENTARY, PANEL MOUNT-THREADED
M2S56D30AKT-75 32M X 8 DDR DRAM, 0.75 ns, PDSO64
M2V56S30ATP-6 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
M30-6000206 2 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
M30-6000406 4 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W800FT70D11 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Gel-pak, waffle pack, wafer, diced wafer on film
M29W800FT70N3E 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 70NS 48TSOP
M29W800FT70N3F 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
M29W800FT70N3F TR 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 70NS 48TSOP
M29W800FT70ZA3SE 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 70NS 48TFBGA
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*