參數(shù)資料
型號: M29W800FB9N3F
廠商: NUMONYX
元件分類: PROM
英文描述: 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁數(shù): 35/49頁
文件大?。?/td> 936K
代理商: M29W800FB9N3F
Common Flash interface (CFI)
M29W800FT, M29W800FB
Table 24.
Device geometry definition
Address
Data
Description
Value
×16
× 8
27h
4Eh
0014h
Device size = 2n in number of bytes
1 Mbyte
28h
29h
50h
52h
0002h
0000h
Flash device interface code description
×8, × 16
async.
2Ah
2Bh
54h
56h
0000h
Maximum number of bytes in multi-byte program or page =
2n
NA
2Ch
58h
0004h
Number of erase block regions within the device.
It specifies the number of regions within the device
containing contiguous erase blocks of the same size.
4
2Dh
2Eh
5Ah
5Ch
0000h
Region 1 information
Number of identical size erase block = 0000h+1
1
2Fh
30h
5Eh
60h
0040h
0000h
Region 1 information
Block size in region 1 = 0040h * 256 bytes
16
Kbytes
31h
32h
62h
64h
0001h
0000h
Region 2 information
Number of identical size erase block = 0001h+1
2
33h
34h
66h
68h
0020h
0000h
Region 2 information
Block size in region 2 = 0020h * 256 bytes
8 Kbytes
35h
36h
6Ah
6Ch
0000h
Region 3 information
Number of identical size erase block = 0000h+1
1
37h
38h
6Eh
70h
0080h
0000h
Region 3 information
Block size in region 3 = 0080h * 256 bytes
32
Kbytes
39h
3Ah
72h
74h
000Eh
0000h
Region 4 information
Number of identical-size erase block = 000Eh+1
15
3Bh
3Ch
76h
78h
0000h
0001h
Region 4 information
Block size in region 4 = 0100h * 256 bytes
64
Kbytes
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