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參數(shù)資料
| 型號： | M36DR432-ZAT |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位256K x16的SRAM，多個存儲產(chǎn)品 |
| 文件頁數(shù)： | 25/52頁 |
| 文件大?。?/td> | 834K |
| 代理商： | M36DR432-ZAT |
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M36DR432AD, M36DR432BD
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 13. Absolute Maximum Ratings
(1)
Note: 1. M
inimum voltage may undershoot to –2V during transition and for less than 20ns.
2. Depends on range.
3. V
DD
= V
DDS
= V
DDF
.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
(3)
–40 to 85
°C
T
BIAS
Temperature Under Bias
–40 to 125
°C
T
STG
Storage Temperature
–55 to 150
°C
V
IO (2)
Input or Output Voltage
–0.5 to V
DD(3)
+0.5
V
V
DDF
Supply Voltage
–0.5 to 2.7
V
V
DDS
SRAM Chip Supply Voltage
–0.5 to 2.4
V
V
PPF
Program Voltage
–0.5 to 13
V
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