參數(shù)資料
型號: M36DR432B120ZA6C
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述: 32兆位的2Mb x16插槽,雙行,頁閃存和4兆位256K x16的SRAM,多個存儲產(chǎn)品
文件頁數(shù): 22/52頁
文件大小: 834K
代理商: M36DR432B120ZA6C
M36DR432AD, M36DR432BD
22/52
Error Bit (DQ5).
The Error Bit can be used to
identify if an error occurs during a program or
erase operation.
The Error Bit is set to ‘1’ when a program or erase
operation has failed. When it is set to ‘0’ the pro-
gram or erase operation was successful.
If any Program command is used to try to set a bit
from ‘0’ to ‘1’ Status Register Error bit DQ5 will be
set to ‘1’, only if V
PP
is in the range of 11.4V to
12.6V.
The Error Bit is reset by a Read/Reset command.
Erase Timer Bit (DQ3).
The Erase Timer bit is
used to indicate the timeout period for an erase
operation.
When the last block Erase command has been en-
tered to the Command Interface and it is waiting
for the erase operation to start, the Erase Timer Bit
is set to ‘0’. When the erase timeout period is fin-
ished, DQ3 returns to ‘1’, (80μs to 120μs).
DQ0, DQ1 and DQ4
are reserved for future use
and should be masked.
Table 11. Polling and Toggle Bits
Mode
DQ7
DQ6
DQ2
Program
DQ7
Toggle
1
Erase
0
Toggle
N/A
Erase Suspend Read
(in Erase Suspend
block)
1
1
Toggle
Erase Suspend Read
(outside Erase Suspend
block)
DQ7
DQ6
DQ2
Erase Suspend Program
DQ7
Toggle
1
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相關(guān)代理商/技術(shù)參數(shù)
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M36DR432B120ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432BD 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
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M36DR432BD12ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
M36DR432BD85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product