參數(shù)資料
型號: M36DR432BDZA
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
中文描述: 32兆位的2Mb x16插槽,雙行,頁閃存和4兆位的256Kb x16的SRAM,多個存儲產(chǎn)品
文件頁數(shù): 37/52頁
文件大?。?/td> 834K
代理商: M36DR432BDZA
37/52
M36DR432AD, M36DR432BD
Table 22. Flash Data Polling and Toggle Bits AC Characteristics
Note: All other timings are defined in Read AC Characteristics
Figure 15. Flash Data Polling Flowchart
Figure 16. Flash Data Toggle Flowchart
Symbol
Parameter
M36DR432AD,
M36DR432BD
Unit
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid (Program, WF Controlled)
8
100
μs
Write Enable High to DQ7 Valid (Block Erase, WF Controlled)
0.8
4
s
t
EHQ7V
Chip Enable High to DQ7 Valid (Program, EF Controlled)
8
100
μs
Chip Enable High to DQ7 Valid (Block Erase, EF Controlled)
0.8
4
s
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
0
ns
t
WHQV
Write Enable High to Output Valid (Program)
8
100
μs
Write Enable High to Output Valid (Block Erase)
0.8
4
s
t
EHQV
Chip Enable High to Output Valid (Program)
8
100
μs
Chip Enable High to Output Valid (Block Erase)
0.8
4
s
READ DQ5 & DQ7
at VALID ADDRESS
START
READ DQ7
FAIL
PASS
AI06197
D=
DATA
YES
NO
YES
NO
DQ5
= 1
D=
DATA
YES
NO
READ
DQ5 & DQ6
START
READ DQ6
FAIL
PASS
AI06198
D=
TOGGLES
NO
NO
YES
YES
DQ5
= 1
NO
YES
D=
TOGGLES
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