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參數(shù)資料
| 型號： | M36DR432BDZA |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位的256Kb x16的SRAM，多個存儲產(chǎn)品 |
| 文件頁數(shù)： | 9/52頁 |
| 文件大小： | 834K |
| 代理商： | M36DR432BDZA |
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M36DR432AD, M36DR432BD
the memory and reduces the power consumption
to the standby level. ES can also be used to con-
trol writing to the SRAM memory array, while WS
remains at V
IL
. It is not allowed to set EF at V
IL
and
ES at V
IL
at the same time.
SRAM Write Enable (WS).
The Write Enable in-
put controls writing to the SRAM memory array.
WS is active Low.
SRAM Output Enable (GS).
The Output Enable
gates the outputs through the data buffers during
a read operation of the SRAM chip. GS is active
Low.
SRAM Upper Byte Enable (UBS).
Enables the
upper bytes for SRAM (DQ8-DQ15). UBS is active
Low.
SRAM Lower Byte Enable (LBS).
Enables the
lower bytes for SRAM (DQ0-DQ7). LBS is active
Low.
V
DDS
Supply Voltage (1.65V to 2.2V).
V
DDS
is the
SRAM power supply for all operations.
Note: Each device in a system should have
V
DDF
and V
PPF
decoupled with a 0.1μF capaci-
tor close to the pin. See Figure 7, AC Measure-
ment Load Circuit. The PCB trace widths
should be sufficient to carry the required V
PPF
program and erase currents.
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PDF描述 |
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| M36DR432B | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
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| M36L0R7050B0ZAQ | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050T0 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050T0ZAQ | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36DR432BZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432CA10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432CA85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432CZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
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