參數(shù)資料
型號: M36DR432BDZA
廠商: 意法半導體
英文描述: 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
中文描述: 32兆位的2Mb x16插槽,雙行,頁閃存和4兆位的256Kb x16的SRAM,多個存儲產(chǎn)品
文件頁數(shù): 41/52頁
文件大?。?/td> 834K
代理商: M36DR432BDZA
41/52
M36DR432AD, M36DR432BD
Figure 22. SRAM Write Cycle Waveform, UBS and LBS Controlled, G Low
Figure 23. SRAM Write AC Waveforms, ES Controlled
Note: Output Enable (GS) = High.
AI07323
tAVAV
tEHAX
A0-A17
ES
WS
DQ0-DQ15
VALID
tAVWH
tBLWH
UBS, LBS
tWLEH
tDVWH
INPUT VALID
tWHDX
tWHQX
tAVWL
tWLQZ
AI07324
tAVAV
tEHAX
tDVWH
A0-A17
ES
WS
DQ0-DQ15
VALID
tAVEL
tWHDX
INPUT VALID
tBLWH
UBS, LBS
tELWH
tWLWH
相關PDF資料
PDF描述
M36DR432B 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36L0R7050B0 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050B0ZAQ 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050T0 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
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