參數(shù)資料
型號(hào)： M36DR432C
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁(yè)閃存和4兆位256K x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品
文件頁(yè)數(shù)： 1/46頁(yè)
文件大?。?/td> 330K
代理商： M36DR432C
1/46
PRELIMINARY DATA
November 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M36DR432C
M36DR432D
32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory
and 4 Mbit (256K x16) SRAM, Multiple Memory Product
FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
DDF
= V
DDS
=1.9V to 2.1V
– V
PPF
= 12V for Fast Program (optional)
I
ACCESS TIME: 85,100ns
I
LOW POWER CONSUMPTION
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36DR432C: 00A4h
– Bottom Device Code, M36DR432D: 00A5h
FLASH MEMORY
I
32 Mbit (2Mb x16) BOOT BLOCK
– Parameter Blocks (Top or Bottom Location)
I
PROGRAMMING TIME
– 10μs typical
– Double Word Programming Option
I
ASYNCRONOUS PAGE MODE READ
– Page width: 4 Word
– Page Mode Access Time: 35ns
I
DUAL BANK OPERATION
– Read within one Bank while Program or
Erase within the other
– No Delay between Read and Write
Operations
I
BLOCK PROTECTION ON ALL BLOCKS
– WPF for Block Locking
I
COMMON FLASH INTERFACE
– 64 bit Security Code
SRAM
I
4 Mbit (256K x 16 bit)
I
LOW V
DDS
DATA RETENTION: 1V
I
POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
Figure 1. Packages
FBGA
Stacked LFBGA66 (ZA)
8 x 8 ball array
相關(guān)PDF資料
PDF描述
M36DR432D 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36L0R7040B0 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
M36L0R7040B0ZAQE 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
M36L0R7040B0ZAQF 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
M36L0R7040B0ZAQT 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36DR432CA10ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432CA85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432CZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432D 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432DA10ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
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