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參數(shù)資料
| 型號： | M36DR432C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位256K x16的SRAM，多個存儲產(chǎn)品 |
| 文件頁數(shù)： | 14/46頁 |
| 文件大?。?/td> | 330K |
| 代理商： | M36DR432C |
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M36DR432C, M36DR432D
14/46
Table 14. Protection States
(1)
Note: 1. All blocks are protected at power-up, so the default configuration is 001 or 101 according to WPF status.
2. Current state and Next state gives the protection status of a block. The protection status is defined by the write protect pin and by
DQ1 (= 1 for a locked block) and DQ0 (= 1 for a protected block) as read in the Autoselect instruction with A1 = V
IH
and A0 = V
IL
.
3. Next state is the protection status of a block after a Protect or Unprotect or Lock command has been issued or after WPF has
changed its logic value.
4. A WPF transition to V
IH
on a locked block will restore the previous DQ0 value, giving a 111 or 110.
Table 15. Instructions
(1,2)
Current State
(2)
(WP, DQ1, DQ0)
Program/Erase
Allowed
Next State After Event
(3)
Protect
Unprotect
Lock
WP transition
100
yes
101
100
111
000
101
no
101
100
111
001
110
yes
111
110
111
011
111
no
111
110
111
011
000
yes
001
000
011
100
001
no
001
000
011
101
011
no
011
011
011
111 or 110
(4)
Mne.
Instr.
Cyc.
1st Cyc.
2nd Cyc.
3rd Cyc.
4th Cyc.
5th Cyc.
6th Cyc.
RD
(4)
Read/Reset
Memory Array
1+
Addr.
(3)
X
Read Memory Array until a new write cycle is initiated.
Data
F0h
3+
Addr.
555h
2AAh
555h
Read Memory Array until a new
write cycle is initiated.
Data
AAh
55h
F0h
RCFI
CFI Query
1+
Addr.
55h
Read CFI data until a new write cycle is initiated.
Data
98h
AS
(4)
Auto Select
3+
Addr.
555h
2AAh
555h
Read electronic Signature or
Block Protection or Configuration
Register Status until a new cycle
is initiated.
Data
AAh
55h
90h
CR
Configuration
Register Write
4
Addr.
555h
2AAh
555h
Configura-
tion Data
Data
AAh
55h
60h
03h
PG
Program
4
Addr.
555h
2AAh
555h
Program
Address
Read Data Polling or
Toggle Bit until
Program completes.
Data
AAh
55h
A0h
Program
Data
DPG
Double Word
Program
5
Addr.
555h
2AAh
555h
Program
Address 1
Program
Address 2
Note 6, 7
Data
AAh
55h
40h
Program
Data 1
Program
Data 2
EBY
Enter Bypass
Mode
3
Addr.
555h
2AAh
555h
Data
AAh
55h
20h
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| M36DR432CZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
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