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參數(shù)資料
| 型號(hào)： | M36DR432C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁(yè)閃存和4兆位256K x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品 |
| 文件頁(yè)數(shù)： | 18/46頁(yè) |
| 文件大?。?/td> | 330K |
| 代理商： | M36DR432C |
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M36DR432C, M36DR432D
18/46
POWER CONSUMPTION
Power Down
The memory provides Reset/Power Down control
input RPF. The Power Down function can be acti-
vated only if the relevant Configuration Register bit
is set to '1'. In this case, when the RPF signal is
pulled at V
SS
the supply current drops to typically
I
CC2
(see Table 24), the memory is deselected and
the outputs are in high impedance.If RPF is pulled
to V
SS
during a Program or Erase operation, this
operation is aborted in t
PLQ7V
and the memory
content is no longer valid (see Reset/Power Down
input description).
Power Up
The memory Command Interface is reset on Pow-
er-Up to Read Array. Either EF or WF must be tied
to V
IH
during Power-Up to allow maximum security
and the possibility to write a command on the first
rising edge of WF.
During Power-Up RPF must remain low for at least
50μs after V
DD
is applied, to allow correct initializa-
tion of the CPU.
Supply Rails
Normal precautions must be taken for supply volt-
age decoupling; each device in a system should
have the V
DDF
rails decoupled with a 0.1μF capac-
itor close to the V
DDF
and V
SS
pins. The PCB trace
widths should be sufficient to carry the required
V
DDF
program and erase currents.
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| M36DR432D | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
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| M36L0R7040B0ZAQE | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package |
| M36L0R7040B0ZAQF | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36DR432CA10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432CA85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432CZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432DA10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
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