參數(shù)資料
型號: M36P0R9070E0ZACE
廠商: 意法半導(dǎo)體
英文描述: 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
中文描述: 512兆位(x16插槽,多銀行,多層次,多突發(fā))128兆位閃存(突發(fā))移動存儲芯片,1.8V電源,多芯片封裝
文件頁數(shù): 13/26頁
文件大?。?/td> 200K
代理商: M36P0R9070E0ZACE
M36P0R9070E0
2 Signal descriptions
13/26
2.22 V
SS
Ground
V
SS
is the common ground reference for all voltage measurements in the Flash (core and I/O
Buffers) and PSRAM chips. It must be connected to the system ground.
Note:
Each Flash memory device in a system should have their supply voltage (V
DDF
) and the
program supply voltage V
PPF
decoupled with a 0.1μF ceramic capacitor close to the pin (high
frequency, inherently low inductance capacitors should be as close as possible to the package).
See
Figure 4., AC Measurement Load Circuit
. The PCB track widths should be sufficient to
carry the required V
PPF
program and erase currents
.
相關(guān)PDF資料
PDF描述
M36P0R9070E0ZACF 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
M36W0R6030B0 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030B0ZAQ 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030B0ZAQE 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030B0ZAQF 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36P0R9070E0ZACF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
M36P0R9070E1ZACE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
M36P0R9070E1ZACF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
M36P0R9070N1ZSE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
M36P0R9070N1ZSF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel