參數(shù)資料
型號： M36P0R9070E0ZACE
廠商： 意法半導(dǎo)體
英文描述： 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
中文描述： 512兆位（x16插槽，多銀行，多層次，多突發(fā)）128兆位閃存（突發(fā)）移動存儲芯片，1.8V電源，多芯片封裝
文件頁數(shù)： 18/26頁
文件大?。?/td> 200K
代理商： M36P0R9070E0ZACE
5 DC and AC parameters
M36P0R9070E0
18/26
Figure 4.
AC Measurement Load Circuit
Table 6.
Capacitance
1.
Sampled only, not 100% tested.
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
14
pF
C
OUT
Output Capacitance
V
OUT
= 0V
14
pF
AI06162a
V
CCQ
/2
CL
R
DEVICE
UNDER
TEST
Z0
OUT
相關(guān)PDF資料
PDF描述
M36P0R9070E0ZACF 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
M36W0R6030B0 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030B0ZAQ 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030B0ZAQE 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030B0ZAQF 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36P0R9070E0ZACF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
M36P0R9070E1ZACE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
M36P0R9070E1ZACF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
M36P0R9070N1ZSE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
M36P0R9070N1ZSF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
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