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參數(shù)資料
| 型號： | M36P0R9070E0ZACE |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| 中文描述： | 512兆位（x16插槽，多銀行，多層次，多突發(fā)）128兆位閃存（突發(fā)）移動存儲芯片，1.8V電源，多芯片封裝 |
| 文件頁數(shù)： | 21/26頁 |
| 文件大?。?/td> | 200K |
| 代理商： | M36P0R9070E0ZACE |
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M36P0R9070E0
5 DC and AC parameters
21/26
Table 9.
PSRAM DC Characteristics
Refreshed
Array
1.
2.
3.
4.
Input signals may overshoot to V
DDQ
+
1.0V for periods of less than 2ns during transitions.
Output signals may undershoot to V
SS
– 1.0V for periods of less than 2ns during transitions.
BCR5-BCR4 = 01 (default settings).
This parameter is specified with all outputs disabled to avoid external loading effects. The user must add the current
required to drive output capacitance expected for the actual system.
I
maximum value is measured at +85°C with PAR set to Full Array. In order to achieve low standby current, all inputs
must be driven either to V
DDQ
or V
SSQ
. I
SB
might be slightly higher for up to 500ms after Power-up, or when entering
Standby mode.
5.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
OH(3)
Output High Voltage
I
OH
= –0.2mA
0.8V
DDQ
V
V
OL(3)
Output Low Voltage
I
OL
= 0.2mA
0.2V
DDQ
V
V
IH(1)
Input High Voltage
V
DDQ
0.4
V
DDQ
+ 0.2
V
V
IL(2)
Input Low Voltage
0.2
0.4
V
I
LI
Input Leakage Current
V
IN
= 0 to V
DDQ
1
μA
I
LO
Output Leakage Current
G
P
= V
IH
or E
P
= V
IH
1
μA
I
CC1(4)
Asynchronous Read/Write
Random at t
RC
min
V
IN
= 0V or V
DDQ
,
I
OUT
= 0mA, E
P
= V
IL
70ns
25
mA
85ns
22
mA
I
CC2
(4)
Asynchronous Page Read
V
IN
= 0V or V
DDQ
I
OUT
= 0mA, E
P
= V
IL
70ns
15
mA
85ns
12
mA
I
CC3
(4)
Burst, Initial Read/Write
Access
V
IN
= 0V or V
DDQ
I
OUT
= 0mA, E
P
= V
IL
104MHz
35
mA
80MHz
30
mA
66MHz
25
mA
I
CC4R
(4) Continuous Burst Read
V
IN
= 0V or V
DDQ
I
OUT
= 0mA, E
P
= V
IL
104MHz
30
mA
80MHz
25
mA
66MHz
20
mA
I
CC4W
(4
)
Continuous Burst Write
V
IN
= 0V or V
DDQ
I
OUT
= 0mA, E
P
= V
IL
104MHz
35
mA
80MHz
30
mA
66MHz
25
mA
I
PASR(4)
Partial Array
Refresh
Standby
Current
Full Array
V
IN
= 0V or V
DDQ
E
P
= V
DDQ
200
μA
1/2 Array
170
μA
1/4 Array
155
μA
1/8 Array
150
μA
None
140
μA
I
SB(5)
Standby Current
V
IN
= 0V or V
DDQ
E
P
= V
DDQ
200
μA
I
CCPD
Deep-Power Down Current
V
IN
= 0V or V
DDQ
,
V
CCP
, V
DDQ
= 1.95V; T
A
= +85°C
3
10
μA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36P0R9070E0ZACF | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
| M36P0R9070E1ZACE | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
| M36P0R9070E1ZACF | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
| M36P0R9070N1ZSE | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
| M36P0R9070N1ZSF | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
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