參數(shù)資料
型號(hào): M37512F8H-XXXHP
元件分類: 微控制器/微處理器
英文描述: 8-BIT, FLASH, 4 MHz, MICROCONTROLLER, PQFP48
封裝: 7 X 7 MM, 0.50 MM PITCH, PLASTIC, LQFP-48
文件頁(yè)數(shù): 58/89頁(yè)
文件大?。?/td> 877K
代理商: M37512F8H-XXXHP
Feb 18, 2005
page 59 of 85
REJ03B0122-0101
7512 Group
Table 13 Summary of the 7512 Group (flash memory version)
FLASH MEMORY MODE
The 7512 Group (flash memory version) has flash memory that
can be rewritten with a single power source.
For this flash memory, two flash memory modes are available in
which to read, program, and erase: the parallel I/O mode in which
the flash memory can be manipulated using a programmer and
the CPU rewrite mode in which the flash memory can be manipu-
lated by the Central Processing Unit (CPU).
Summary
Table 13 lists the summary of the 7512 Group (flash memory ver-
sion).
The flash memory of the 7512 Group is divided into 4 blocks of
User ROM area and Boot ROM area as shown in Figure 68.
In addition to the ordinary User ROM area to store the MCU op-
eration control program, the flash memory has a Boot ROM area
that is used to store a control program in a Boot mode. The user
can write a rewrite control program in this Boot ROM area that
suits the user’s application system. This Boot ROM area can be
rewritten in only parallel I/O mode.
Item
Power source voltage
Program / Erase voltage
Flash memory mode
Erase block division User ROM area
Boot ROM area
Program method
Erase method
Program/Erase control method
Number of commands
Number of program/ Block 0 to Block 3
Erase times
Block A, Block B
ROM code protection
Specifications
Vcc = 2.5V±2%
2 modes (Parallel I/O mode, CPU rewrite mode)
Refer to the Figure 68
1 block (4K bytes) (Note 1)
Byte program
Batch erasing
Program/Erase control by software command
5 commands
100 times
1K times
Available in parallel I/O mode
Note 1: This Boot ROM area can be rewritten in only parallel I/O mode.
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