- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄180205 > M390S3323DT1-C7A 32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 PDF資料下載
參數(shù)資料
| 型號(hào)： | M390S3323DT1-C7A |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 108K |
| 代理商： | M390S3323DT1-C7A |
M390S3323DT1
PC133 Registered DIMM
Rev. 0.1 Sept. 2001
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on V DD supply relative to Vss
VDD , VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
18
W
Short circuit current
IOS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V SS = 0V, TA = 0 to 70
°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VDD , VDDQ
3.0
3.3
3.6
V
Input logic high voltage
VIH
2.0
3.0
VDDQ+0.3
V
1
Input logic low voltage
VIL
-0.3
0
0.8
V
2
Output logic high voltage
VOH
2.4
-
V
IOH = -2mA
Output logic low voltage
VOL
-
0.4
V
IOL = 2mA
Input leakage current
ILI
-10
-
10
uA
3
1. V IH (max) = 5.6V AC. The overshoot voltage duration is
≤ 3ns.
2. V IL (min) = -2.0V AC. The undershoot voltage duration is
≤ 3ns.
3. Any input 0V
≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :
CAPACITANCE (VDD = 3.3V, TA = 23
°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A12)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0)
Input capacitance (CLK0)
Input capacitance (CS0 ~CS3)
Input capacitance (DQM0 ~ DQM7)
Input capacitance (BA0 ~ BA1)
Data input/output capacitance (DQ0 ~ DQ63)
Data input/output capacitance (CB0~CB7)
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CIN7
COUT
COUT1
-
19
33
12
19
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M391T2953CZ3-CCC | 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| M3933/16-55N | 0 MHz - 18000 MHz RF/MICROWAVE FIXED ATTENUATOR |
| M3933/16-55S | 0 MHz - 18000 MHz RF/MICROWAVE FIXED ATTENUATOR |
| M3933/16-56N | 0 MHz - 18000 MHz RF/MICROWAVE FIXED ATTENUATOR |
| M3933/16-56S | 0 MHz - 18000 MHz RF/MICROWAVE FIXED ATTENUATOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M390S6450CT1 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD |
| M390S6450CT1-C7A | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD |
| M390S6450CT1-C7C | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD |
| M390S6450ET1-C7A | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:168pin Registered Module based on 256Mb E-die with 72-bit ECC |
| M390S6450ET1-C7A00 | 制造商:Samsung 功能描述:256 SDRAM MODULE X72 TSOP2-400 - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。