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參數(shù)資料
| 型號： | M48ST59W-70MH1TR |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 時鐘/數(shù)據(jù)恢復(fù)及定時提取 |
| 英文描述： | 0 TIMER(S), REAL TIME CLOCK, PDSO44 |
| 封裝： | 0.330 INCH, SNAPHAT, PLASTIC, SOH-44 |
| 文件頁數(shù)： | 6/29頁 |
| 文件大?。?/td> | 158K |
| 代理商： | M48ST59W-70MH1TR |
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M48ST59W
14/29
Table 9. Power Down/Up Trip Points DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: TA =0 to 70°Cor –40 to 85°C; VCC = 2.7 to 3.6V (except where noted).
2. All voltages referenced to VSS.
3. Using larger M4T32-BR12SH6 SNAP HAT top (recommended for Industrial Temperature Range - Grade 6 device).
Table 10. Power Down/Up AC Characteristics
Note: 1. Valid for Ambient Operating Temperature: TA =0 to 70°Cor –40 to 85°C; VCC = 2.7 to 3.6V (except where noted).
2. VPFD (max) to VPFD (min) Fall Time of less than tF may result in deselection/write protection not occurring until 200 s after VCC
passes VPFD (min).
3. VPFD (min) to VSS Fall Time of less than tFB may cause corruption of RAM data.
4. tREC is undefined at initial power-up. Refer to Table 13, page 20.
Symbol
Parameter(1,2)
Min
Typ
Max
Unit
VPFD
Power-fail Deselect Voltage
2.5
2.6
2.7
V
VSO
Battery Back-up Switchover Voltage
VPFD –100mV
mV
VPFI
PFI Input Threshold
1.225
1.250
1.275
V
tDR
Expected Data Retention Time (at 25
°C)
Grade 1
7
Years
Grade 6(3)
10
Years
Symbol
Parameter(1)
Min
Typ
Max
Unit
tPD
E or W at VIH before Power Down
0
s
tF
(2)
VPFD (max) to VPFD (min) VCC Fall Time
300
s
tFB
(3)
VPFD (min) to VSS VCC Fall Time
10
s
tR
VPFD (min) to VPFD (max) VCC Rise Time
10
s
tRB
VSS to VPFD (min) VCC Rise Time
1
s
tPFD
PFI to PFO Propagation Delay
15
25
s
tREC
(4)
VPFD (max) to RST High
Note 4
ms
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