參數(shù)資料
型號(hào): M48Z12-70PC6
廠商: STMICROELECTRONICS
元件分類: SRAM
英文描述: 2K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP24
封裝: 0.600 INCH, ROHS COMPLIANT, CAPHAT, PLASTIC, DIP-24
文件頁數(shù): 4/21頁
文件大?。?/td> 177K
代理商: M48Z12-70PC6
Operation modes
M48Z02, M48Z12
2.4
VCC noise and negative going transients
ICC transients, including those produced by output switching, can produce voltage
fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if
capacitors are used to store energy which stabilizes the VCC bus. The energy stored in the
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 F (as shown in
Figure 8) is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on VCC that drive it to values below VSS by as much as
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, STMicroelectronics recommends
connecting a schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS).
Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is
recommended for surface mount.
Figure 8.
Supply voltage protection
AI02169
VCC
0.1
μF
DEVICE
VCC
VSS
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