參數(shù)資料
型號: M50FW080NB5TP
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
中文描述: 8兆1兆× 8,統(tǒng)一座3V電源閃存固件集線器
文件頁數(shù): 24/56頁
文件大?。?/td> 292K
代理商: M50FW080NB5TP
Command interface
M50FW080
24/55
4.4
Program command
The Program command can be used to program a value to one address in the memory array
at a time. Two Bus Write operations are required to issue the command; the second Bus
Write cycle latches the address and data in the internal state machine and starts the
Program/Erase Controller. Once the command is issued subsequent Bus Read operations
read the Status Register. See the section on the Status Register for details on the definitions
of the Status Register bits.
If the address falls in a protected block then the Program operation will abort, the data in the
memory array will not be changed and the Status Register will output the error.
During the Program operation the memory will only accept the Read Status Register
command and the Program/Erase Suspend command. All other commands will be ignored.
Typical Program times are given in
Table 14
.
Note that the Program command cannot change a bit set at ‘0’ back to ‘1’ and attempting to
do so will not cause any modification on its value. One of the Erase commands must be
used to set all of the bits in the block to ‘1’.
See
Figure 18
, for a suggested flowchart on using the Program command.
4.5
Quadruple Byte Program command
The Qua-druple Byte Program Command can be only used in A/A Mux mode to program
four adjacent bytes in the memory array at a time. The four bytes must differ only for the
addresses A0 and A10. Programming should not be attempted when V
PP
is not at V
PPH
.
The operation can also be executed if V
PP
is below V
PPH
, but result could be uncertain. Five
Bus Write operations are required to issue the command. The second, the third and the
fourth Bus Write cycle latches respectively the address and data of the first, the second and
the third byte in the internal state machine. The fifth Bus Write cycle latches the address and
data of the fourth byte in the internal state machine and starts the Program/Erase Controller.
Once the command is issued subsequent Bus Read operations read the Status Register.
See the section on the Status Register for details on the definitions of the Status Register
bits.
During the Quadruple Byte Program operation the memory will only accept the Read Status
register command and the Program/Erase Suspend command. All other commands will be
ignored. Typical Quadruple Byte Program times are given in
Table 8
.
Note that the Quadruple Byte Program command cannot change a bit set to ‘0’ back to ‘1’
and attempting to do so will not cause any modification on its value. One of the Erase
commands must be used to set all of the bits in the block to ‘1’.
See
Figure 19
, Quadruple Byte Program Flowchart and Pseudo Code, for a suggested
flowchart on using the Quadruple Byte Program command.
相關(guān)PDF資料
PDF描述
M50LPW002 2 Mbit 256Kb x8, Boot Block 3V Supply Low Pin Count Flash Memory
M50LPW002K 2 Mbit 256Kb x8, Boot Block 3V Supply Low Pin Count Flash Memory
M50LPW002K1T 2 Mbit 256Kb x8, Boot Block 3V Supply Low Pin Count Flash Memory
M50LPW002K5T 2 Mbit 256Kb x8, Boot Block 3V Supply Low Pin Count Flash Memory
M50LPW012 2 Mbit 256Kb x8, Boot Block 3V Supply Low Pin Count Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M50G1041 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Multilayer Ceramic Capacitors
M50G1041-F 制造商:CDE 制造商全稱:Cornell Dubilier Electronics 功能描述:Multilayer Ceramic Capacitors COG (NPO). X7R & Z5U Capacitors
M50G104J1 功能描述:CAP CER 0.1UF 100V 5% RADIAL RoHS:否 類別:電容器 >> 陶瓷 系列:M50 標(biāo)準(zhǔn)包裝:4,000 系列:- 電容:1000pF 電壓 - 額定:50V 容差:±10% 溫度系數(shù):X7R 安裝類型:表面貼裝,MLCC 工作溫度:-55°C ~ 125°C 應(yīng)用:自動 額定值:AEC-Q200 封裝/外殼:0805(2012 公制) 尺寸/尺寸:0.079" L x 0.047" W(2.00mm x 1.20mm) 高度 - 座高(最大):- 厚度(最大):- 引線間隔:- 特點:- 包裝:帶卷 (TR) 引線型:-
M50G1241 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Multilayer Ceramic Capacitors
M50G1241-F 制造商:CDE 制造商全稱:Cornell Dubilier Electronics 功能描述:Multilayer Ceramic Capacitors COG (NPO). X7R & Z5U Capacitors