參數(shù)資料
型號(hào)： M52D128168A-10TG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 2M x 16 Bit x 4 Banks Synchronous DRAM
中文描述： 8M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54
封裝： 0.400 INCH, LEAD FREE, TSOP2-54
文件頁數(shù)： 24/47頁
文件大?。?/td> 1209K
代理商： M52D128168A-10TG
ES MT
8. Burst Stop & Interrupted by Precharge
Preliminary
M52D128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
May. 2007
24/47
9. MRS
*Note: 1. t
BDL
: 1 CLK ; Last data in to burst stop delay.
Read or write burst stop command is valid at every burst length.
2. Number of valid output data after burst stop : 1,2 for CAS latency = 2,3 respectiviely.
3. Write burst is terminated. t
RDL
determinates the last data write.
4. DQM asserted to prevent corruption of locations D2 and D3.
5. Precharge can be issued here or earlier (satisfying t
RAS
min delay) with DQM.
6. PRE : All banks precharge, if necessary.
MRS can be issued only at all banks precharge state.
CLK
CMD
DQ (CL2)
DQ( CL3)
CLK
CMD
DQ M
DQ
D0
D1
D2
D3
WR
ST OP
* N ot e1
Q0
Q1
Q0
Q1
RD
STO P
* N ot e2
1) W ri t e B ur s t S t op ( B L= 8 )
2 )R e ad B ur s t S t op (B L= 4)
CLK
CMD
DQ( CL2)
CLK
CMD
DQ M
DQ
D0
D1
Mask Mask
W R
Q0
Q1
RD
PRE
1) W ri t e in t err up t ed by pr ec ha rg e ( B L= 4)
2 )R ea d i nt er ru pt ed by pr ec har ge (B L =4)
* Not e 2
PRE
* N ot e4
* N ot e3
DQ( CL3)
* N ot e5
Q2
Q1
Q2
Q3
Q0
t
R DL
t
B DL
D4
D5
Q3
CLK
CMD
PRE
*N ot e6
MRS
ACT
t
RP
2C LK
1)M od e R eg is t e r S et
相關(guān)PDF資料
PDF描述
M52D128168A-7.5BG 2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-7.5TG 2M x 16 Bit x 4 Banks Synchronous DRAM
M52D16161A 512K x 16Bit x 2Banks Synchronous DRAM
M52D16161A-10BG 512K x 16Bit x 2Banks Synchronous DRAM
M52D16161A-10TG 512K x 16Bit x 2Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M52D128168A-10TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-7.5BG 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 1.8V 133MHZ FBGA54 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM, 128MB, 1.8V, 133MHZ, FBGA54 制造商:ELITE SEMICONDUCTOR 功能描述:IC, SDRAM, 128MBIT, 133MHZ, FBGA-54; Memory Type:DRAM - Sychronous; Memory Configuration:2M x 16; Page Size:128MB; Memory Case Style:FBGA; No. of Pins:54; IC Interface Type:Parallel; Operating Temperature Min:0C; Frequency:133MHz ;RoHS Compliant: Yes
M52D128168A-7.5BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-7.5TG 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 1.8V 133MHZ TSOPII54
M52D128168A-7.5TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
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