參數(shù)資料
型號: M52D128168A-10TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 2M x 16 Bit x 4 Banks Synchronous DRAM
中文描述: 8M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54
封裝: 0.400 INCH, LEAD FREE, TSOP2-54
文件頁數(shù): 40/47頁
文件大小: 1209K
代理商: M52D128168A-10TG
ES MT
Preliminary
M52D128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
May. 2007
40/47
Read interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length = Full page
*Note : 1. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycles”.
2. Burst stop is valid at every burst length.
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M52D128168A-10TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-7.5BG 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 1.8V 133MHZ FBGA54 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM, 128MB, 1.8V, 133MHZ, FBGA54 制造商:ELITE SEMICONDUCTOR 功能描述:IC, SDRAM, 128MBIT, 133MHZ, FBGA-54; Memory Type:DRAM - Sychronous; Memory Configuration:2M x 16; Page Size:128MB; Memory Case Style:FBGA; No. of Pins:54; IC Interface Type:Parallel; Operating Temperature Min:0C; Frequency:133MHz ;RoHS Compliant: Yes
M52D128168A-7.5BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-7.5TG 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 1.8V 133MHZ TSOPII54
M52D128168A-7.5TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM