參數(shù)資料
型號: M52D128168A-10TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 2M x 16 Bit x 4 Banks Synchronous DRAM
中文描述: 8M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54
封裝: 0.400 INCH, LEAD FREE, TSOP2-54
文件頁數(shù): 43/47頁
文件大?。?/td> 1209K
代理商: M52D128168A-10TG
ES MT
Preliminary
M52D128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
May. 2007
43/47
Self Refresh Entry & Exit Cycle
*
Note :
TO ENTER SELF REFRESH MODE
1. CS , RAS & CAS with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.
3. The device remains in self refresh mode as long as CKE stays “Low”.
cf.) Once the device enters self refresh mode, minimum t
RAS
is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5. CS starts from high.
6. Minimum t
RFC
is required after CKE going high to complete self refresh exit.
7. Burst auto refresh is required before self refresh entry and after self refresh exit if the
system uses burst refresh.
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M52D128168A-10TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-7.5BG 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 1.8V 133MHZ FBGA54 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM, 128MB, 1.8V, 133MHZ, FBGA54 制造商:ELITE SEMICONDUCTOR 功能描述:IC, SDRAM, 128MBIT, 133MHZ, FBGA-54; Memory Type:DRAM - Sychronous; Memory Configuration:2M x 16; Page Size:128MB; Memory Case Style:FBGA; No. of Pins:54; IC Interface Type:Parallel; Operating Temperature Min:0C; Frequency:133MHz ;RoHS Compliant: Yes
M52D128168A-7.5BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-7.5TG 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 1.8V 133MHZ TSOPII54
M52D128168A-7.5TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM