參數(shù)資料
型號(hào): M52D128168A-7.5BG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 2M x 16 Bit x 4 Banks Synchronous DRAM
中文描述: 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
封裝: 8 X 8 MM, LEAD FREE, FBGA-54
文件頁(yè)數(shù): 47/47頁(yè)
文件大小: 1209K
代理商: M52D128168A-7.5BG
ES MT
Preliminary
M52D128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
May. 2007
47/47
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The contents contained in this document are believed to be accurate at the
time of publication. ESMT assumes no responsibility for any error in this
document, and reserves the right to change the products or specification in
this document without notice.
The information contained herein is presented only as a guide or examples
for the application of our products. No responsibility is assumed by ESMT for
any infringement of patents, copyrights, or other intellectual property rights of
third parties which may result from its use. No license, either express ,
implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of ESMT or others.
Any semiconductor devices may have inherently a certain rate of failure. To
minimize risks associated with customer's application, adequate design and
operating safeguards against injury, damage, or loss from such failure,
should be provided by the customer when making application designs.
ESMT's products are not authorized for use in critical applications such as,
but not limited to, life support devices or system, where failure or abnormal
operation may directly affect human lives or cause physical injury or property
damage. If products described here are to be used for such kinds of
application, purchaser must do its own quality assurance testing appropriate
to such applications.
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