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參數(shù)資料
| 型號： | M52D128168A |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 200萬× 16位× 4個銀行同步DRAM |
| 文件頁數(shù)： | 5/47頁 |
| 文件大?。?/td> | 1209K |
| 代理商： | M52D128168A |
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ES MT
M52D128168A
Preliminary
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
May. 2007
5/47
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted
，
TA = 0 to 70
C
°
Version
Parameter
Symbol
Test Condition
CAS
Latency
-7.5
-10
Unit Note
Operating Current
(One Bank Active)
I
CC1
Burst Length = 1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0mA
40
30
mA
1
I
CC2P
CKE
≤
V
IL
(max), t
CC
=15ns
0.3
mA
Precharge Standby
Current in power-down
mode
I
CC2PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
0.3
mA
I
CC2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=10ns
Input signals are changed one time during 20ns
10
mA
Precharge Standby
Current in non
power-down mode
I
CC2NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
1
mA
I
CC3P
CKE
≤
V
IL
(max), t
CC
=15ns
5
Active Standby Current
in power-down mode
I
CC3PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
1
mA
I
CC3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=10ns
Input signals are changed one time during 20ns
20
mA
Active Standby Current
in non power-down
mode
(One Bank Active)
I
CC3NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
10
mA
Operating Current
(Burst Mode)
Refresh Current
I
CC4
I
OL
= 0mA, Page Burst
All Band Activated, tCCD = tCCD (min)
50
45
mA
1
I
CC5
t
RC
≥
t
RC
(min)
90
85
mA
2
TCSR range
45
70
C
°
4 Banks
150
250
2 Bank
140
210
Self Refresh Current
I
CC6
CKE
≤
0.2V
1 Bank
135
190
uA
Deep Power Down
Current
I
CC7
CKE
≤
0.2V
10
uA
Note:
1.Measured with outputs open. Addresses are changed only one time during t
CC
(min).
2.Refresh period is 64ms. Addresses are changed only one time during t
CC
(min).
相關PDF資料 |
PDF描述 |
|---|---|
| M52D128168A-10BG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52D128168A-10TG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52D128168A-7.5BG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52D128168A-7.5TG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52D16161A | 512K x 16Bit x 2Banks Synchronous DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M52D128168A_09 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Mobile Synchronous DRAM |
| M52D128168A_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52D128168A-10BG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 1.8V 100MHZ FBGA54 |
| M52D128168A-10BIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52D128168A-10TG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 1.8V 100MHZ TSOPII54 |
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