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參數(shù)資料
| 型號(hào)： | M52S32162A-10BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 1M x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 2M X 16 SYNCHRONOUS DRAM, 8 ns, PBGA54 |
| 封裝： | 8 X 8 MM, LEAD FREE, VFBGA-54 |
| 文件頁(yè)數(shù)： | 5/30頁(yè) |
| 文件大?。?/td> | 787K |
| 代理商： | M52S32162A-10BG |
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ES MT
M52S32162A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
1.2
5/30
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0
C
°
~ 70
C
°
)
Version
Parameter
Symbol
Test Condition
CAS
Latency
-7.5
-10
Unit Note
Operating Current
(One Bank Active)
I
CC1
Burst Length = 1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0mA
80
60
mA
1
I
CC2P
CKE
≤
V
IL
(max), t
CC
=15ns
0.3
mA
Precharge Standby
Current in power-down
mode
I
CC2PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
0.2
mA
I
CC2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
9
mA
Precharge Standby
Current in non
power-down mode
I
CC2NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
8
mA
I
CC3P
CKE
≤
V
IL
(max), t
CC
=15ns
2
Active Standby Current
in power-down mode
I
CC3PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
1.5
mA
I
CC3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
15
mA
Active Standby Current
in non power-down
mode
(One Bank Active)
I
CC3NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
8
mA
Operating Current
(Burst Mode)
Refresh Current
I
CC4
I
OL
= 0Ma, Page Burst
All Band Activated, tCCD = tCCD (min)
80
60
mA
1
I
CC5
t
RC
≥
t
RC
(min)
40
40
mA
2
TCSR range
45
70
C
°
2 Banks
180
200
Self Refresh Current
I
CC6
CKE
≤
0.2V
1 Bank
160
180
uA
Deep Power Down
Current
I
CC7
CKE
≤
0.2V
15
uA
Note:
1.Measured with outputs open. Addresses are changed only one time during t
CC
(min).
2.Refresh period is 64ms. Addresses are changed only one time during t
CC
(min).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M52S32162A-10TG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-7.5BG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-7.5TG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M538002 | 524,288-Word x 16-Bit or 1,048,576 x 8-Bit Mask ROM |
| M541 | 262,214-Word x 12-Bit Field Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M52S32162A-10BIG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 32MB 2.5V 100MHZ FBGA54 |
| M52S32162A-10TG | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52S32162A-10TIG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 32MB 2.5V 100MHZ TSOPII54 |
| M52S32162A-6BG | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52S32162A-6TG | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM |
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