型號(hào): | M52S32162A-10BG |
廠商: | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
元件分類: | DRAM |
英文描述: | 1M x 16Bit x 2Banks Synchronous DRAM |
中文描述: | 2M X 16 SYNCHRONOUS DRAM, 8 ns, PBGA54 |
封裝: | 8 X 8 MM, LEAD FREE, VFBGA-54 |
文件頁(yè)數(shù): | 7/30頁(yè) |
文件大?。?/td> | 787K |
代理商: | M52S32162A-10BG |
相關(guān)PDF資料 |
PDF描述 |
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M52S32162A-10TG | 1M x 16Bit x 2Banks Synchronous DRAM |
M52S32162A-7.5BG | 1M x 16Bit x 2Banks Synchronous DRAM |
M52S32162A-7.5TG | 1M x 16Bit x 2Banks Synchronous DRAM |
M538002 | 524,288-Word x 16-Bit or 1,048,576 x 8-Bit Mask ROM |
M541 | 262,214-Word x 12-Bit Field Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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M52S32162A-10BIG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 32MB 2.5V 100MHZ FBGA54 |
M52S32162A-10TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM |
M52S32162A-10TIG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 32MB 2.5V 100MHZ TSOPII54 |
M52S32162A-6BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM |
M52S32162A-6TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM |