參數(shù)資料
型號: M58LW064D110N6E
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
中文描述: 64兆位(和8Mb × 8,4Mb的x16插槽,統(tǒng)一座)3V電源快閃記憶體
文件頁數(shù): 20/51頁
文件大小: 349K
代理商: M58LW064D110N6E
M58LW064D
20/51
Table 9. Program, Erase Times and Program Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Effective byte programming time 6μs, effective word programming time 12μs.
4. Maximum value measured at worst case conditions for both temperature and V
DD
after 100,000 program/erase cycles.
5. Maximum value measured at worst case conditions for both temperature and V
DD
.
Parameters
M58LW064D
Unit
Min
Typ
(1,2)
Max
(2)
Block (1Mb) Erase
1.2
4.8
(4)
s
Chip Program (Write to Buffer)
49
145
(4)
s
Chip Erase Time
74
220
(4)
s
Program Write Buffer
192
(3)
576
(4)
μs
Word/Byte Program Time
(Word/Byte Program command)
16
48
(4)
μs
Program Suspend Latency Time
1
20
(5)
μs
Erase Suspend Latency Time
1
25
(5)
μs
Block Protect Time
18
30
(5)
μs
Blocks Unprotect Time
0.75
1.2
(5)
s
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
20
years
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