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參數(shù)資料
| 型號(hào)： | M58LW064D110N6E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| 中文描述： | 64兆位（和8Mb × 8，4Mb的x16插槽，統(tǒng)一座）3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 37/51頁(yè) |
| 文件大?。?/td> | 349K |
| 代理商： | M58LW064D110N6E |
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M58LW064D
Table 26. CFI - Device Voltage and Timing Specification
Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.
3. Not supported.
4. In x8 mode, A0 must be set to V
IL
, otherwise 00h will be output.
Table 27. Device Geometry Definition
Note: 1. In x8 mode, A0 must be set to V
IL
, otherwise 00h will be output.
Address
Data
Description
x16
x8
(4)
001Bh
36h
27h
(1)
V
DD
Min, 2.7V
001Ch
38h
36h
(1)
V
DD
max, 3.6V
001Dh
3Ah
00h
(2)
V
PP
min – Not Available
001Eh
3Ch
00h
(2)
V
PP
max – Not Available
001Fh
3Eh
04h
2
n
μs typical time-out for Word, DWord prog – Not Available
0020h
40h
08h
2
n
μs, typical time-out for max buffer write
0021h
42h
0Ah
2
n
ms, typical time-out for Erase Block
0022h
44h
00h
(3)
2
n
ms, typical time-out for chip erase – Not Available
0023h
46h
04h
2
n
x typical for Word Dword time-out max – Not Available
0024h
48h
04h
2
n
x typical for buffer write time-out max
0025h
4Ah
04h
2
n
x typical for individual block erase time-out maximum
0026h
4Ch
00h
(3)
2
n
x typical for chip erase max time-out – Not Available
Address
Data
Description
x16
x8
(1)
0027h
4Eh
17h
n where 2
n
is number of bytes memory Size
0028h
50h
02h
Device Interface
0029h
52h
00h
Organization Sync./Async.
002Ah
54h
05h
Maximum number of bytes in Write Buffer, 2
n
002Bh
56h
00h
002Ch
58h
01h
Bit7-0 = number of Erase Block Regions in device
002Dh
5Ah
3Fh
Number (n-1) of Erase Blocks of identical size; n=64
002Eh
5Ch
00h
002Fh
5Eh
00h
Erase Block Region Information
x 256 bytes per Erase block (128K bytes)
0030h
60h
02h
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PDF描述 |
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| M58LW064D110N6F | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N6T | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW128BZA | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
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| M58LW128B150N6F | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064D110N6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N6T | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW064D110ZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110ZA1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110ZA1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
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