參數(shù)資料
型號： M58LW064D110N6E
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
中文描述： 64兆位（和8Mb × 8，4Mb的x16插槽，統(tǒng)一座）3V電源快閃記憶體
文件頁數(shù)： 50/51頁
文件大小： 349K
代理商： M58LW064D110N6E
M58LW064D
50/51
REVISION HISTORY
Table 30. Document Revision History
Date
Version
Revision Details
08-Nov-2001
-01
First Issue (Data Brief)
01-Feb-2002
-02
x8 Bus Width added, Speed Class modified, Signal Names and Connections modified
09-Apr-2002
-03
Document expanded to full Product Preview
16-Jul-2002
3.1
Revision numbering modified: a minor revision will be indicated by incrementing the
digit after the dot, and a major revision, by incrementing the digit before the dot
(revision version 03 becomes 3.0).
t
WHDX
and t
WHAX
changed in Table 17, “Write AC Characteristics”.
06-Aug-2002
4.0
Device Code changed and Effective Programming Time modified. V
DDQ
range
modified (in particular in Tables 12 and 22, and V
DDQ
removed from note 1 below
Table 9).
In Table 9, Block Erase Time and Program Write Buffer Time parameters modified.
Figure 2, Logic Diagram modified. V
DD
, V
DDQ
, V
SS
and V
SSQ
pin descriptions
modified. Document status changed from Product Preview to Preliminary Data.
14-Oct-2002
4.1
A0 Address Line described separately from others (A1-A22) in Table 1 and in
“SIGNAL DESCRIPTIONS” paragraph. Address Lines modified in Table 3, Bus
Operations. Byte signal added to Figure 9, Bus Read AC Waveforms, timings t
ELBL
,
t
BLQV
and t
BLQZ
added to Table 15, Bus Read AC Characteristics, timings t
AVLH
and
t
ELLH
removed from Table 18, Write AC Characteristics, Chip Enable Controlled. “Write
70h” removed from flowchart Figures 17 and 19. Table 3, Bus Operations, clarified.
REVISION HISTORY moved to after appendices.
16-Dec-2002
4.2
Table 9, Program, Erase Times and Program Erase Endurance Cycles table modified.
Table 6, Read Electronic Signature table clarified. Certain DU connections changed to
NC in Table 4, TBGA64 Connections (Top view through package). x8 Address
modified in Table 24, Query Structure Overview. Note regarding A0 value in x8 mode
added to all CFI Tables. Block Protect setup command address modified in Table 4,
Commands. Data and Descriptions clarified in CFI Table 29, Extended Query
information. I
OSC
parameter added to Absolute Maximum Ratings table. I
DD
and V
LKO
clarified and I
DDO
and V
PENH
parameters added to DC Characteristics table. t
PHWL
parameter added to Reset, Power-Down and Power-Up AC Waveforms figure and
Characteristics table.
相關(guān)PDF資料
PDF描述
M58LW064D110N6F 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N6T 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW128BZA 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW064D110N6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N6T 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW064D110ZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
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