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參數(shù)資料
| 型號： | M58LW064D110ZA1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| 中文描述： | 64兆位（和8Mb × 8，4Mb的x16插槽，統(tǒng)一座）3V電源快閃記憶體 |
| 文件頁數(shù)： | 14/51頁 |
| 文件大?。?/td> | 349K |
| 代理商： | M58LW064D110ZA1T |
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M58LW064D
14/51
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. The Commands are summarized in Table
4, Commands. Refer to Table 4 in conjunction with
the text descriptions below.
After power-up or a Reset operation the memory
enters Read mode.
Read Memory Array Command.
The Read Mem-
ory Array command is used to return the memory
to Read mode. One Bus Write cycle is required to
issue the Read Memory Array command and re-
turn the memory to Read mode. Once the com-
mand is issued the memory remains in Read
mode until another command is issued. From
Read mode Bus Read operations will access the
memory array. After power-up or a reset the mem-
ory defaults to Read Array mode (Page Read).
While the Program/Erase Controller is executing a
Program, Erase, Block Protect, Blocks Unprotect
or Protection Register Program operation the
memory will not accept the Read Memory Array
command until the operation completes.
Read Electronic Signature Command.
The Read
Electronic Signature command is used to read the
Manufacturer Code, the Device Code, the Block
Protection Status and the Protection Register.
One Bus Write cycle is required to issue the Read
Electronic Signature command. Once the com-
mand is issued subsequent Bus Read operations
read the Manufacturer Code, the Device Code, the
Block Protection Status or the Protection Register
until another command is issued. Refer to Table 6,
Read Electronic Signature, Tables 7 and 8, Word
and Byte-wide Read Protection Register and Fig-
ure 6, Protection Register Memory Map for infor-
mation on the addresses.
Read Query Command.
The Read Query Com-
mand is used to read data from the Common Flash
Interface (CFI) Memory Area. One Bus Write cycle
is required to issue the Read Query Command.
Once the command is issued subsequent Bus
Read operations read from the Common Flash In-
terface Memory Area. See Appendix B, Tables 24,
25, 26, 27, 28 and 29 for details on the information
contained in the Common Flash Interface (CFI)
memory area.
Read Status Register Command.
The Read Sta-
tus Register command is used to read the Status
Register. One Bus Write cycle is required to issue
the Read Status Register command. Once the
command is issued subsequent Bus Read opera-
tions read the Status Register until another com-
mand is issued.
The Status Register information is present on the
output data bus (DQ1-DQ7) when the device is en-
abled and Output Enable is Low, V
IL
.
See the section on the Status Register and Table
10 for details on the definitions of the Status Reg-
ister bits
Clear Status Register Command.
The Clear Sta-
tus Register command can be used to reset bits 1,
3, 4 and 5 in the Status Register to ‘0’. One Bus
Write is required to issue the Clear Status Register
command.
The bits in the Status Register are sticky and do
not automatically return to ‘0’ when a new Write to
Buffer and Program, Erase, Block Protect, Block
Unprotect or Protection Register Program com-
mand is issued. If any error occurs then it is essen-
tial to clear any error bits in the Status Register by
issuing the Clear Status Register command before
attempting a new Program, Erase or Resume
command.
Block Erase Command.
The Block Erase com-
mand can be used to erase a block. It sets all of
the bits in the block to ‘1’. All previous data in the
block is lost. If the block is protected then the
Erase operation will abort, the data in the block will
not be changed and the Status Register will output
the error.
Two Bus Write operations are required to issue the
command; the second Bus Write cycle latches the
block address in the internal state machine and
starts the Program/Erase Controller. Once the
command is issued subsequent Bus Read opera-
tions read the Status Register. See the section on
the Status Register for details on the definitions of
the Status Register bits.
During the Erase operation the memory will only
accept the Read Status Register command and
the Program/Erase Suspend command. All other
commands will be ignored. Typical Erase times
are given in Table 9.
See Appendix C, Figure 18, Block Erase Flow-
chart and Pseudo Code, for a suggested flowchart
on using the Block Erase command.
Word/Byte Program Command.
The
Byte Program command is used to program a sin-
gle Word or Byte in the memory array. Two Bus
Write operations are required to issue the com-
mand; the first write cycle sets up the Word Pro-
gram command, the second write cycle latches the
address and data to be programmed in the internal
state machine and starts the Program/Erase Con-
troller.
If the block being programmed is protected an er-
ror will be set in the Status Register and the oper-
ation will abort without affecting the data in the
memory array. The block must be unprotected us-
Word/
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW064D110ZA6 | DIODE, LED GREEN SMT SIEMENS LGA670-K |
| M58LW064D110ZA6E | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110ZA6F | GREEN SMT 0805 9MCD @ 20MA TYP |
| M58LW064D110ZA6T | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110ZA | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064D110ZA6 | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW064D110ZA6E | 制造商:Micron Technology Inc 功能描述: |
| M58LW064D110ZA6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110ZA6T | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW128A | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
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