參數(shù)資料
型號(hào): M58LW064D110ZA1T
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
中文描述: 64兆位(和8Mb × 8,4Mb的x16插槽,統(tǒng)一座)3V電源快閃記憶體
文件頁(yè)數(shù): 29/51頁(yè)
文件大?。?/td> 349K
代理商: M58LW064D110ZA1T
29/51
M58LW064D
Figure 11. Write AC Waveform, Write Enable Controlled
Note: 1. V
IH
= Device Disabled (first edge of E0, E1 or E2), V
IL
= Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more
details.
Table 17. Write AC Characteristics, Write Enable Controlled
Symbol
Parameter
Test Condition
M58LW064D
Unit
110
t
AVWH
Address Valid to Write Enable High
E = V
IL
Min
50
ns
t
DVWH
Data Input Valid to Write Enable High
E = V
IL
Min
50
ns
t
ELWL
Chip Enable Low to Write Enable Low
Min
0
ns
t
VPHWH
Program/Erase Enable High to Write Enable High
Min
0
ns
t
WHAX
Write Enable High to Address Transition
E = V
IL
Min
0
ns
t
WHBL
Write Enable High to Status/(Ready/Busy) low
Max
500
ns
t
WHDX
Write Enable High to Input Transition
E = V
IL
Min
0
ns
t
WHEH
Write Enable High to Chip Enable High
Min
0
ns
t
GHWL
Output Enable High to Write Enable Low
Min
20
ns
t
WHGL
Write Enable High to Output Enable Low
Min
35
ns
t
WHWL
Write Enable High to Write Enable Low
Min
30
ns
t
WLWH
Write Enable Low to Write Enable High
E = V
IL
Min
70
ns
AI06215
DQ0-DQ15
STS
(Ready/Busy mode)
W
A0-A22
E2, E1, E0
(1)
G
INPUT
VALID
tWHEH
tAVWH
tWLWH
tELWL
VPEN
tWHAX
tWHWL
tWHDX
tDVWH
tVPHWH
tWHGL
tGHWL
tWHBL
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