參數(shù)資料
型號: M58LW064D110ZA1T
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
中文描述: 64兆位(和8Mb × 8,4Mb的x16插槽,統(tǒng)一座)3V電源快閃記憶體
文件頁數(shù): 27/51頁
文件大?。?/td> 349K
代理商: M58LW064D110ZA1T
27/51
M58LW064D
Figure 9. Bus Read AC Waveforms
Note: 1. V
IH
= Device Disabled (first edge of E0, E1 or E2), V
IL
= Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more
details.
2. BYTE can be Low or High.
Table 15. Bus Read AC Characteristics.
Symbol
Parameter
Test Condition
M58LW064D
Unit
110
t
AVAV
Address Valid to Address Valid
E = V
IL
, G = V
IL
Min
110
ns
t
AVQV
Address Valid to Output Valid
E = V
IL
, G = V
IL
Max
110
ns
t
AXQX
Address Transition to Output Transition
E = V
IL
, G = V
IL
Min
0
ns
t
BLQV
Byte Low (or High) to Output Valid
E = V
IL
, G = V
IL
Max
1
μs
t
BLQZ
Byte Low (or High) to Output Hi-Z
E = V
IL
, G = V
IL
Max
1
μs
t
EHQX
Chip Enable High to Output Transition
G = V
IL
Min
0
ns
t
EHQZ
Chip Enable High to Output Hi-Z
G = V
IL
Max
25
ns
t
ELBL
Chip Enable Low to Byte Low (or High)
G = V
IL
Max
10
ns
t
ELQX
Chip Enable Low to Output Transition
G = V
IL
Min
0
ns
t
ELQV
Chip Enable Low to Output Valid
G = V
IL
Max
110
ns
t
GHQX
Output Enable High to Output Transition
E = V
IL
Min
0
ns
t
GHQZ
Output Enable High to Output Hi-Z
E = V
IL
Max
15
ns
t
GLQX
Output Enable Low to Output Transition
E = V
IL
Min
0
ns
t
GLQV
Output Enable Low to Output Valid
E = V
IL
Max
25
ns
AI06213b
E2, E1, E0
(1)
G
A0-A22
DQ0-DQ15
VALID
tAXQX
tELQX
tAVQV
tGLQV
tGLQX
tEHQZ
tEHQX
tGHQX
OUTPUT
tAVAV
tGHQZ
tELQV
BYTE
(2)
tELBL
tBLQV
tBLQZ
相關(guān)PDF資料
PDF描述
M58LW064D110ZA6 DIODE, LED GREEN SMT SIEMENS LGA670-K
M58LW064D110ZA6E 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA6F GREEN SMT 0805 9MCD @ 20MA TYP
M58LW064D110ZA6T 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW064D110ZA6 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW064D110ZA6E 制造商:Micron Technology Inc 功能描述:
M58LW064D110ZA6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA6T 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW128A 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories