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參數(shù)資料
| 型號： | M58LW064D11N1T |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 3V PROM, 110 ns, PDSO56 |
| 封裝： | 14 X 20 MM, PLASTIC, TSOP-56 |
| 文件頁數(shù)： | 30/50頁 |
| 文件大小： | 280K |
| 代理商： | M58LW064D11N1T |
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M58LW064D
36/50
APPENDIX B. COMMON FLASH INTERFACE - CFI
The Common Flash Interface is a JEDEC ap-
proved, standardized data structure that can be
read from the Flash memory device. It allows a
system software to query the device to determine
various electrical and timing parameters, density
information and functions supported by the mem-
ory. The system can interface easily with the de-
vice, enabling the software to upgrade itself when
necessary.
When the CFI Query Command (RCFI) is issued
the device enters CFI Query mode and the data
structure is read from the memory. Tables 25, 26,
27, 28, 29 and 30 show the addresses used to re-
trieve the data.
Table 25. Query Structure Overview
Note: 1. Offset 15h defines P which points to the Primary Algorithm Extended Query Address Table.
2. Offset 19h defines A which points to the Alternate Algorithm Extended Query Address Table.
3. SBA is the Start Base Address for each block.
Table 26. CFI - Query Address and Data Output
Note: 1. Query Data are always presented on DQ7-DQ0. DQ15-DQ8 are set to ’0’.
2. Offset 19h defines A which points to the Alternate Algorithm Extended Query Address Table.
Address
Sub-section Name
Description
x16
x8
0000h
10h
Manufacturer Code
0001h
11h
Device Code
0010h
20h
CFI Query Identification String
Command set ID and algorithm data offset
001Bh
36h
System Interface Information
Device timing and voltage information
0027h
4Eh
Device Geometry Definition
Flash memory layout
P(h)(1)
Primary Algorithm-specific Extended
Query Table
Additional information specific to the Primary
Algorithm (optional)
A(h)(2)
Alternate Algorithm-specific Extended
Query Table
Additional information specific to the Alternate
Algorithm (optional)
(SBA+02)h
Block Status Register
Block-related Information
Address
Data
Description
x16
x8
0010h
20h
51h
”Q”
51h; ”Q”
Query ASCII String
52h; ”R”
59h; ”Y”
0011h
22h
52h
”R”
0012h
24h
59h
”Y”
0013h
26h
01h
Primary Vendor:
Command Set and Control Interface ID Code
0014h
28h
00h
0015h
2Ah
31h
Primary algorithm extended Query Address Table: P(h)
0016h
2Ch
00h
0017h
2Eh
00h
Alternate Vendor:
Command Set and Control Interface ID Code
0018h
30h
00h
0019h
32h
00h
Alternate Algorithm Extended Query address Table
001Ah(2)
34h
00h
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| M58LW128A | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128A150N1 | 功能描述:閃存 8Mx16 or 4Mx32 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW128A150N1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128A150N1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128A150N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
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