參數(shù)資料
型號(hào): M58LW128B150N1F
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
中文描述: 128兆位和8Mb x16或4Mb的X32號(hào),統(tǒng)一座,突發(fā)3V電源閃存
文件頁數(shù): 31/65頁
文件大?。?/td> 932K
代理商: M58LW128B150N1F
31/65
M58LW128A, M58LW128B
Table 12. Status Register Bits
Note: 1.
For Program operations during Erase Suspend Bit 6 is ‘1’, otherwise Bit 6 is ‘0’.
Operation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
RB
Program/Erase Controller Active
‘0’
Hi-Z
V
OL
Write Buffer not ready
‘0’
Hi-Z
V
OL
Write Buffer ready
‘1’
X
(1)
‘0’
‘0’
‘0’
‘0’
‘0’
Hi-Z
Program suspended
‘1’
X
(1)
‘0’
‘0’
‘0’
‘1’
‘0’
Hi-Z
Program/Block Protect completed successfully
‘1’
X
(1)
‘0’
‘0’
‘0’
‘0’
‘0’
Hi-Z
Program/Block Protect failure due to incorrect command
sequence
’1’
X
(1)
‘1’
‘1’
‘0’
‘0’
‘0’
Hi-Z
Program/Block Protect failure due to V
PP
Error
’1’
X
(1)
‘0’
‘1’
‘1’
‘0’
‘0’
Hi-Z
Program failure due to Block Protection
‘1’
X
(1)
‘0’
‘1’
‘0’
‘0’
‘1’
Hi-Z
Program/Block Protect failure due cell failure or unerased cell
‘1’
X
(1)
‘0’
‘1’
‘0’
‘0’
‘0’
Hi-Z
Erase suspended
‘1’
‘1’
‘0’
‘0’
‘0’
‘0’
‘0’
Hi-Z
Erase/Blocks Unprotect completed successfully
‘1’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
Hi-Z
Erase/Blocks Unprotect failure due to incorrect command
sequence
‘1’
X
‘1’
‘1’
‘0’
‘0’
‘0’
Hi-Z
Erase/Block Unprotect failure due to V
PP
Error
’1’
‘0’
‘1’
‘0’
‘1’
‘0’
‘0’
Hi-Z
Erase failure due to Block Protection
‘1’
‘0’
‘1’
‘0’
‘0’
‘0’
‘1’
Hi-Z
Erase/Blocks Unprotect failure due to failed cell(s) in block
‘1’
‘0’
‘1’
‘0’
‘0’
‘0’
‘0’
Hi-Z
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