參數(shù)資料
型號: M58LW128B150N1F
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
中文描述: 128兆位和8Mb x16或4Mb的X32號,統(tǒng)一座,突發(fā)3V電源閃存
文件頁數(shù): 43/65頁
文件大?。?/td> 932K
代理商: M58LW128B150N1F
43/65
M58LW128A, M58LW128B
Figure 20. Synchronous Burst Read - Continuous - Valid Data Ready Output
Note: 1. Valid Data Ready = Valid Low during valid clock edge (M8 = 0)
2. V= Valid output, NV= Not Valid output.
3. R is an open drain output
.
Depending on the Valid Data Ready pin capacitance load an external pull up resistor must be chosen
according to the system clock period.
4. When the system clock frequency is between 33MHz and 50MHz and the Y latency is set to 2, values of B sampled on odd clock
cycles, starting from the first read are not considered.
AI06139
K
Output
(2)
V
V
NV
NV
V
V
tRLKH
R
V
(3)
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M58LW128B150N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW128B150N6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW128B150N6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW128B150N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW128B150ZA1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories