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參數(shù)資料
| 型號(hào)： | M58LW128B150N6E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| 中文描述： | 128兆位和8Mb x16或4Mb的X32號(hào)，統(tǒng)一座，突發(fā)3V電源閃存 |
| 文件頁(yè)數(shù)： | 44/65頁(yè) |
| 文件大?。?/td> | 932K |
| 代理商： | M58LW128B150N6E |
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M58LW128A, M58LW128B
44/65
Table 22. Synchronous Burst Read AC Characteristics
Note: For other timings see Table 17, Asynchronous Bus Read Characteristics.
Symb
ol
Parameter
Test Condition
M58LW128
Unit
150
t
AVKH
Address Valid to Active Clock Edge
E = V
IL
Min
10
ns
t
AVLH
Address Valid to Latch Enable High
E = V
IL
Min
10
ns
t
BHKH
Burst Address Advance High to Active Clock Edge
E = V
IL
, G = V
IL
, L = V
IH
Min
10
ns
t
BLKH
Burst Address Advance Low to Active Clock Edge
E = V
IL
, G = V
IL
, L = V
IH
Min
10
ns
t
ELKH
Chip Enable Low to Active Clock Edge
E = V
IL
Min
10
ns
t
ELLH
Chip Enable Low to Latch Enable High
E = V
IL
Min
10
ns
t
GLKH
Output Enable Low to Valid Clock Edge
E = V
IL
, L = V
IH
Min
20
ns
t
KHAX
Valid Clock Edge to Address Transition
E = V
IL
Min
10
ns
t
KHLL
Valid Clock Edge to Latch Enable Low
E = V
IL
Min
0
ns
t
KHLH
Valid Clock Edge to Latch Enable High
E = V
IL
Min
0
ns
t
KHQX
Valid Clock Edge to Output Transition
E = V
IL
, G = V
IL
, L = V
IH
Min
3
ns
t
LLKH
Latch Enable Low to Valid Clock Edge
E = V
IL
Min
10
ns
t
LLLH
Latch Enable Low to Latch Enable High
E = V
IL
Min
10
ns
t
KHQV
Valid Clock Edge to Output Valid
E = V
IL
, G = V
IL
, L = V
IH
Max
20
ns
t
QVKH
Output Valid to Active Clock Edge
E = V
IL
, G = V
IL
, L = V
IH
Min
5
ns
t
RLKH
Valid Data Ready Low to Valid Clock Edge
E = V
IL
, G = V
IL
, L = V
IH
Min
5
ns
t
KHBL
Active Clock Edge to Burst Address Advance Low
E = V
IL
, G = V
IL
, L = V
IH
Min
0
ns
t
KHBH
Active Clock Edge to Burst Address Advance High
E = V
IL
, G = V
IL
, L = V
IH
Min
0
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW128B150N6F | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150N6T | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150ZA1E | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150ZA1F | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150ZA1T | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW128B150N6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150ZA1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150ZA1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
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