參數(shù)資料
型號(hào)： M58WR032FT80ZB6T
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
中文描述： 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 20/86頁(yè)
文件大?。?/td> 1306K
代理商： M58WR032FT80ZB6T
M58WR032FT, M58WR032FB
20/86
■
The fourth bus cycle latches the Address and
the Data of the third word to be written.
The fifth bus cycle latches the Address and the
Data of the fourth word to be written and starts
the Program/Erase Controller.
Read operations to the bank being programmed
output the Status Register content after the pro-
gramming has started.
Programming aborts if Reset goes to V
IL
. As data
integrity cannot be guaranteed when the program
operation is aborted, the memory locations must
be reprogrammed.
During Quadruple Word Program operations the
bank being programmed will only accept the Read
Array, Read Status Register, Read Electronic Sig-
nature and Read CFI Query command, all other
commands will be ignored.
Dual operations are not supported during Quadru-
ple Word Program operations and the command
cannot be suspended. Typical Program times are
given in
Table 14., Program/Erase Times and En-
durance Cycles
.
See
APPENDIX C.
,
Figure 24., Quadruple Word
Program Flowchart and Pseudo Code
, for the
flowchart for using the Quadruple Word Program
command.
Enhanced Factory Program Command
The Enhanced Factory Program command can be
used to program large streams of data within any
one block. It greatly reduces the total program-
ming time when a large number of Words are writ-
ten to a block at any one time.
Dual operations are not supported during the En-
hanced Factory Program operation and the com-
mand cannot be suspended.
For optimum performance the Enhanced Factory
Program commands should be limited to a maxi-
mum of 10 program/erase cycles per block. If this
limit is exceeded the internal algorithm will contin-
ue to work properly but some degradation in per-
formance is possible. Typical Program times are
given in
Table 14.
The Enhanced Factory Program command has
four phases: the Setup Phase, the Program Phase
to program the data to the memory, the Verify
Phase to check that the data has been correctly
programmed and reprogram if necessary and the
Exit Phase. Refer to
Table 7., Factory Program
Commands
, and
Figure 30., Enhanced Factory
Program Flowchart
.
Setup Phase.
The Enhanced Factory Program
command requires two Bus Write operations to ini-
tiate the command.
The first bus cycle sets up the Enhanced
Factory Program command.
The second bus cycle confirms the command.
■
■
■
The Status Register P/E.C. Bit SR7 should be
read to check that the P/E.C. is ready. After the
confirm command is issued, read operations
output the Status Register data. The read Status
Register command must not be issued as it will be
interpreted as data to program.
Program Phase.
The Program Phase requires
n+1 cycles, where n is the number of Words (refer
to
Table 7., Factory Program Commands
, and
Fig-
ure 30., Enhanced Factory Program Flowchart
).
Three successive steps are required to issue and
execute the Program Phase of the command.
1.
Use one Bus Write operation to latch the Start
Address and the first Word to be programmed.
The Status Register Bank Write Status bit SR0
should be read to check that the P/E.C. is
ready for the next Word.
2.
Each subsequent Word to be programmed is
latched with a new Bus Write operation. The
address can either remain the Start Address,
in which case the P/E.C. increments the
address location or the address can be
incremented in which case the P/E.C. jumps to
the new address. If any address that is not in
the same block as the Start Address is given
with data FFFFh, the Program Phase
terminates and the Verify Phase begins. The
Status Register bit SR0 should be read
between each Bus Write cycle to check that
the P/E.C. is ready for the next Word.
3.
Finally, after all Words have been pro-
grammed, write one Bus Write operation with
data FFFFh to any address outside the block
containing the Start Address, to terminate the
programming phase. If the data is not FFFFh,
the command is ignored.
The memory is now set to enter the Verify Phase.
Verify Phase.
The Verify Phase is similar to the
Program Phase in that all Words must be resent to
the memory for them to be checked against the
programmed data. The Program/Erase Controller
checks the stream of data with the data that was
programmed in the Program Phase and repro-
grams the memory location if necessary.
Three successive steps are required to execute
the Verify Phase of the command.
1.
Use one Bus Write operation to latch the Start
Address and the first Word, to be verified. The
Status Register bit SR0 should be read to
check that the Program/Erase Controller is
ready for the next Word.
2.
Each subsequent Word to be verified is
latched with a new Bus Write operation. The
Words must be written in the same order as in
the Program Phase. The address can remain
the Start Address or be incremented. If any
address that is not in the same block as the
相關(guān)PDF資料
PDF描述
M58WR032FB60ZB6 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB60ZB6E 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB60ZB6F 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB60ZB6T 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB70ZB6 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR032F-ZB 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZBE 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZBF 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZBT 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032KB70ZB6E 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 32Mbit 2M x 16bit 70ns 56-Pin VFBGA 制造商:Micron Technology Inc 功能描述:32M (X16) 1.8V, MULTIPLE BANK BURST, VFBGA56, IND, HAZMAT - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 70NS 56VFBGA
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*