參數(shù)資料
型號： M58WR032FT80ZB6T
廠商： 意法半導體
英文描述： 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
中文描述： 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體
文件頁數(shù)： 65/86頁
文件大小： 1306K
代理商： M58WR032FT80ZB6T
65/86
M58WR032FT, M58WR032FB
Table 35. Protection Register Information
Table 36. Burst Read Information
Table 37. Bank and Erase Block Region Information
Note: 1. The variable P is a pointer which is defined at CFI offset 15h.
2. Bank Regions. There are two Bank Regions, see
Table 28.
and
Table 29.
Offset
Data
Description
Value
(P+E)h = 47h
0001h
Number of protection register fields in JEDEC ID space. 0000h indicates that
256 fields are available.
1
(P+F)h = 48h
0080h
Protection Field 1: Protection Description
Bits 0-7 Lower byte of protection register address
Bits 8-15 Upper byte of protection register address
Bits 16-23 2
n
bytes in factory pre-programmed region
Bits 24-31 2
n
bytes in user programmable region
0080h
(P+10)h = 49h
0000h
(P+11)h = 4Ah
0003h
8 Bytes
(P+12)h= 4Bh
0004h
16 Bytes
Offset
Data
Description
Value
(P+13)h = 4Ch
0003h
Page-mode read capability
bits 0-7 ’n’ such that 2
n
HEX value represents the number of read-page
bytes. See offset 28h for device word width to determine
page-mode data output width.
8 Bytes
(P+14)h = 4Dh
0004h
Number of synchronous mode read configuration fields that follow.
4
(P+15)h = 4Eh
0001h
Synchronous mode read capability configuration 1
bit 3-7 Reserved
n+1
HEX value represents the maximum number of
continuous synchronous reads when the device is configured
for its maximum word width. A value of 07h indicates that the
device is capable of continuous linear bursts that will output
data until the internal burst counter reaches the end of the
device’s burstable address space. This field’s 3-bit value can
be written directly to the read configuration register bit 0-2 if
the device is configured for its maximum word width. See
offset 28h for word width to determine the burst data output
width.
4
(P+16)h = 4Fh
0002h
Synchronous mode read capability configuration 2
8
(P+17)h = 50h
0003h
Synchronous mode read capability configuration 3
16
(P+18)h = 51h
0007h
Synchronous mode read capability configuration 4
Cont.
M58WR032FT (top)
M58WR032FB (bottom)
Description
Offset
Data
Offset
Data
(P+19)h = 52h
02h
(P+19)h = 52h
02h
Number of Bank Regions within the device
相關PDF資料
PDF描述
M58WR032FB60ZB6 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB60ZB6E 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB60ZB6F 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB60ZB6T 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB70ZB6 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
M58WR032F-ZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZBE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZBF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZBT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032KB70ZB6E 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 32Mbit 2M x 16bit 70ns 56-Pin VFBGA 制造商:Micron Technology Inc 功能描述:32M (X16) 1.8V, MULTIPLE BANK BURST, VFBGA56, IND, HAZMAT - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 70NS 56VFBGA
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