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參數(shù)資料
| 型號(hào)： | M59DR032B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，第低壓閃存 |
| 文件頁數(shù)： | 15/38頁 |
| 文件大?。?/td> | 270K |
| 代理商： | M59DR032B |
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M59DR032A, M59DR032B
Table 17. CFI Query System Interface Information
Offset
Data
Description
1Bh
0017h
V
DD
Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1Ch
0022h
V
DD
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1Dh
0000h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
Note: This value must be 0000h if no V
PP
pin is present
1Eh
00C0h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
Note: This value must be 0000h if no V
PP
pin is present
1Fh
0004h
Typical timeout per single byte/word program (multi-byte program count = 1), 2
n
μs
(if supported; 0000h = not supported)
20h
0000h
Typical timeout for maximum-size multi-byte program or page write, 2
n
μs
(if supported; 0000h = not supported)
21h
000Ah
Typical timeout per individual block erase, 2
n
ms
(if supported; 0000h = not supported)
22h
0000h
Typical timeout for full chip erase, 2
n
ms
(if supported; 0000h = not supported)
23h
0004h
Maximum timeout for byte/word program, 2
n
times typical (offset 1Fh)
(0000h = not supported)
24h
0000h
Maximum timeout for multi-byte program or page write, 2
n
times typical (offset 20h)
(0000h = not supported)
25h
0004h
Maximum timeout per individual block erase, 2
n
times typical (offset 21h)
(0000h = not supported)
26h
0000h
Maximum timeout for chip erase, 2
n
times typical (offset 22h)
(0000h = not supported)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59DR032B100N1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032BZB | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100N6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100ZB1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR032B100N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B120N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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