- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359085 > M59DR032B (意法半導(dǎo)體) 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M59DR032B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，第低壓閃存 |
| 文件頁(yè)數(shù)： | 29/38頁(yè) |
| 文件大小： | 270K |
| 代理商： | M59DR032B |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)當(dāng)前第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)
29/38
M59DR032A, M59DR032B
Table 28. Data Polling and Toggle Bits AC Characteristics
(1)
(T
A
= 0 to 70 °C or –40 to 85 °C; V
DD
= V
DDQ
= 1.65V to 2.2V)
Note: 1. All other timings are defined in Read AC Characteristics table.
Symbol
Parameter
M59DR032
Unit
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid (Program, W Controlled)
10
200
μs
Write Enable High to DQ7 Valid (Block Erase, W Controlled)
1.0
10
sec
t
EHQ7V
Chip Enable High to DQ7 Valid (Program, E Controlled)
10
200
μs
Chip Enable High to DQ7 Valid (Block Erase, E Controlled)
1.0
10
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
0
ns
t
WHQV
Write Enable High to Output Valid (Program)
10
200
μs
Write Enable High to Output Valid (Block Erase)
1.0
10
sec
t
EHQV
Chip Enable High to Output Valid (Program)
10
200
μs
Chip Enable High to Output Valid (Block Erase)
1.0
10
sec
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59DR032B100N1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032BZB | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100N6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100ZB1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100ZB6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR032B100N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B120N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。